公开(公告)号：US20240036476A1

公开(公告)日：2024-02-01

申请号：US18120916

申请日：2023-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jihwan Park ,  Kuntack Lee

IPC: G03F7/20 ,  H01J37/32

CPC classification number: G03F7/70033 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715

Abstract: Provided is a substrate processing apparatus including a processing chamber including a processing space, a substrate support configured to support a substrate in the processing chamber, an exhaust pipe arranged on a bottom wall of the processing chamber, an exhaust device configured to exhaust a fluid in the processing space via the exhaust pipe, a first supply pipe including a first portion inserted into the exhaust pipe and a second portion outside the exhaust pipe, and a fluid supply device configured to supply a fluid in a supercritical state to the processing space via the first supply pipe, wherein a first inlet at an end portion of the first supply pipe and an exhaust opening at an end portion of the exhaust pipe are on a central axis of the processing chamber.

公开(公告)号：US11881426B2

公开(公告)日：2024-01-23

申请号：US17735723

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40 ,  G03F7/20

CPC classification number: H01L21/68707 ,  G03F7/40 ,  G03F7/2004

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US20150220672A1

公开(公告)日：2015-08-06

申请号：US14420303

申请日：2013-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihwan Park

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/5036 ,  G06F1/3237 ,  G06F17/10 ,  G06F17/5022 ,  G06F2217/78 ,  Y02D10/128

Abstract: A method of modeling power consumption of an integrated circuit and an apparatus for supporting the same are provided. The method of modeling power consumption of an integrated circuit includes: grasping information about a clock gating enable signal of the integrated circuit; determining a modeling level using a change rate of the number of the clock enable signal; and extracting a power state according to the modeling level and the number of the clock gating enable signal and modeling power consumption in the power state. Thereby, because a power state can be defined with only the number of a clock gating enable signal, a dynamic power consumption amount can be quickly and accurately estimated.

Abstract translation: 提供了一种对集成电路的功耗进行建模的方法和用于支持集成电路的装置。 集成电路的功耗建模方法包括：掌握集成电路的时钟门控使能信号; 使用所述时钟使能信号的数量的变化率来确定建模级别; 并根据建模级别和时钟门控使能信号的数量和功率状态下的建模功耗提取电源状态。 因此，由于能够仅使用时钟门控使能信号的数量来定义功率状态，因此可以快速准确地估计动态功耗量。