公开(公告)号：US20240218248A1

公开(公告)日：2024-07-04

申请号：US18409958

申请日：2024-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo HWANG ,  Yong Wook KIM ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Ji-Yeong KIM

IPC: C09K11/88 ,  C01G9/00 ,  C09K11/56 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C01G9/006 ,  C09K11/565 ,  C09K11/567 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/60

Abstract: A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

公开(公告)号：US20230287269A1

公开(公告)日：2023-09-14

申请号：US18318053

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Soo Kyung KWON ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Jihyun MIN ,  Sungwoo HWANG ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  C09K11/06 ,  C01G9/00 ,  C01G9/08 ,  G02F1/13357 ,  H10K59/38

CPC classification number: C09K11/883 ,  C09K11/54 ,  C09K11/565 ,  C09K11/06 ,  C01G9/006 ,  C01G9/08 ,  G02F1/133621 ,  H10K59/38 ,  G02F2202/36 ,  C01P2006/60 ,  C01P2004/90 ,  C01P2004/64 ,  G02B6/005

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US20230183567A1

公开(公告)日：2023-06-15

申请号：US18105911

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Yeong KIM ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Yong Wook KIM ,  Eun Joo JANG

IPC: C09K11/54 ,  C09K11/02 ,  C09K11/57 ,  C09K11/58 ,  C09K11/64 ,  C09K11/88

CPC classification number: C09K11/54 ,  C09K11/02 ,  C09K11/57 ,  C09K11/58 ,  C09K11/64 ,  C09K11/88 ,  B82Y20/00

Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

公开(公告)号：US20200332191A1

公开(公告)日：2020-10-22

申请号：US16851539

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung KWON ,  Seon-Yeong KIM ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/02 ,  H01L27/32 ,  F21V8/00

Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.

公开(公告)号：US20200332190A1

公开(公告)日：2020-10-22

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Ji-Yeong KIM

IPC: C09K11/88 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/02

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US20230323204A1

公开(公告)日：2023-10-12

申请号：US18209563

申请日：2023-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Yong Wook KIM ,  Soo Kyung KWON ,  Ji-Yeong KIM ,  Sungwoo HWANG

IPC: C09K11/88 ,  C01G9/00 ,  C01B19/04 ,  C09K11/70 ,  C09K11/74 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01B19/04 ,  C09K11/703 ,  C09K11/70 ,  C09K11/7414 ,  H10K50/115 ,  B82Y40/00 ,  B82Y20/00 ,  H10K2102/00 ,  C01P2006/60 ,  C01P2004/64

Abstract: A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

公开(公告)号：US20230029597A1

公开(公告)日：2023-02-02

申请号：US17875208

申请日：2022-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook KIM ,  Eun Joo JANG ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Ji-Yeong KIM ,  Sungwoo HWANG

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/50

Abstract: A display panel includes a light emitting panel including a light emitting unit; and a color conversion panel. The color conversion panel includes a color conversion layer including a color conversion region including semiconductor nanoparticles, and a partition wall defining the color conversion region. An optical diffuser is between the light emitting unit and the color conversion region to cover a light extraction surface of the light emitting unit. A length of the light extraction surface of the light emitting unit is greater than or equal to about 500 nm and less than or equal to about 100 μm and a ratio of a length of the optical diffuser to the length of the light extraction surface of the light emitting unit is greater than or equal to about 1.4:1 and less than or equal to about 60:1.

公开(公告)号：US20220145178A1

公开(公告)日：2022-05-12

申请号：US17583305

申请日：2022-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Tae Gon KIM ,  Jooyeon AHN ,  Ji-Yeong KIM ,  Nayoun WON ,  Shin Ae JUN

IPC: C09K11/88 ,  C09K11/08 ,  C09K11/02 ,  H01L51/50

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

公开(公告)号：US20220119707A1

公开(公告)日：2022-04-21

申请号：US17502667

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo HWANG ,  Yong Wook KIM ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Ji-Yeong KIM

IPC: C09K11/88 ,  C09K11/56 ,  C01G9/00

Abstract: A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

公开(公告)号：US20210348055A1

公开(公告)日：2021-11-11

申请号：US17243741

申请日：2021-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung KWON ,  Yong Wook KIM ,  Seon-Yeong KIM ,  Ji-Yeong KIM ,  Jihyun MIN ,  Eun Joo JANG ,  Seonmyeong CHOI ,  Sungwoo HWANG

IPC: C09K11/56 ,  C09K11/88 ,  H01L51/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.