公开(公告)号：US20200058609A1

公开(公告)日：2020-02-20

申请号：US16364775

申请日：2019-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggi JIN ,  Ju-ll CHOI ,  Teahwa JEONG ,  Atsushi FUJISAKI

IPC: H01L23/00 ,  H01L21/768

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.