公开(公告)号：US10361205B2

公开(公告)日：2019-07-23

申请号：US15821089

申请日：2017-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Hee Cho ,  Jun Soo Kim ,  Hui Jung Kim ,  Tae Yoon An ,  Satoru Yamada ,  Won Sok Lee ,  Nam Ho Jeon ,  Moon Young Jeong ,  Ki Jae Hur ,  Jae Ho Hong

IPC: H01L27/108 ,  H01L27/12 ,  H01L21/768 ,  H01L29/423

Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.