-
公开(公告)号:US20230299480A1
公开(公告)日:2023-09-21
申请号:US18202163
申请日:2023-05-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kihyun KIM , Seokhyeon KIM , Yonghoon KIM , Hyunchul PARK
Abstract: In a 5th generation (5G) or pre-5G communication system for supporting a high data transfer rate, a method of measuring a power of a signal in an electronic device may include obtaining, by at least one sensor, a first voltage of the signal at a first point between a power amplifier and a transmission line, obtaining, by the at least one sensor, a second voltage of the signal at a second point between the transmission line and an antenna, and calculating a power of the signal, based on the first voltage and the second voltage. A length of the transmission line may be based on a wavelength of the signal. The method and corresponding electronic device reduce an error between power to be calculated and power consumed in practice.
-
公开(公告)号:US20210218376A1
公开(公告)日:2021-07-15
申请号:US17250748
申请日:2019-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunchul PARK , Byungjoon PARK , Daehyun KANG , Juho SON , Sunggi YANG , Jeongho LEE , Yunsung CHO
Abstract: Disclosed is a 5G (5th generation) or pre-5G communication system for supporting a data transmission rate higher than that of a 4G (4th generation) communication system such as long-term evolution (LTE). A transmission device comprises: a first amplification unit having a common source structure, including cross coupled capacitors, and amplifying an input signal; a second amplification unit, having a common gate structure, for amplifying a signal output from the first amplification unit; and a first removal unit which is connected to output terminals of the first amplification unit and input terminals of the second amplification unit and which removes at least one portion of second harmonics. The first removal unit can offset, with respect to a fundamental frequency, at least some of parasitic capacitance generated from the output terminals of the first amplification unit and the input terminals of the second amplification unit, and can ground a signal having a secondary harmonic frequency with respect to the secondary harmonic frequency.
-
公开(公告)号:US20200228062A1
公开(公告)日:2020-07-16
申请号:US16740317
申请日:2020-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kihyun KIM , Daehyun KANG , Hyunchul PARK , Kyuhwan AN , Jaesik JANG
IPC: H03D7/12
Abstract: The disclosure relates to a communication method and system for converging a 5G communication system for supporting higher data rates beyond a 4G system with an IoT technology. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car or connected car, healthcare, digital education, retail, security and safety-related services. The disclosure provides a mixer including a first impedance connected in parallel to a mixer output transformer and configured to remove a primary local frequency component generated at an output of the mixer, and a second impedance connected in parallel to the mixer output transformer and configured to remove a secondary local frequency component generated at the output of the mixer, wherein the first impedance operates as a series resonator in a primary local frequency band, and the second impedance operates as a parallel resonator in a secondary local frequency band.
-
公开(公告)号:US20200212859A1
公开(公告)日:2020-07-02
申请号:US16727105
申请日:2019-12-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kihyun KIM , Hyunchul PARK , Kyuhwan AN , Jaesik JANG , Yunsung CHO
Abstract: An electronic device including an amplifier which includes a first transistor configured to receive an input signal through a gate terminal thereof and having a source terminal electrically connected to ground, a second transistor configured to transmit an output signal through a drain terminal thereof and having a gate terminal electrically connected to the ground, and a switch electrically connected to the gate terminal of the second transistor and configured to switch a voltage being supplied to the gate terminal of the second transistor in accordance with turn-on or turn-off of the amplifier.
-
-
-