公开(公告)号：US11616118B2

公开(公告)日：2023-03-28

申请号：US16938286

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjin Kim ,  Sungsoo Yim ,  Suklae Kim ,  Hyukwoo Kwon ,  Byunghyun Lee ,  Yoonyoung Choi

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit semiconductor device includes a plurality of cylindrical structures separated from each other on a substrate; and a plurality of supporters having an opening region exposing side surfaces of the plurality of cylindrical structures, the plurality of supporters being in contact with the side surfaces of the plurality of cylindrical structures and supporting the plurality of cylindrical structures, wherein each of the plurality of supporters has both side surfaces having slopes and has a top width that is less than a bottom width.

公开(公告)号：US11264294B2

公开(公告)日：2022-03-01

申请号：US16919307

申请日：2020-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungheon Lee ,  Jaekang Koh ,  Hyukwoo Kwon ,  Munjun Kim ,  Taejong Han

IPC: H01L21/02 ,  H01L23/29 ,  H01L23/31

Abstract: A method of manufacturing an integrated circuit device, the method including forming a plurality of target patterns on a substrate such that an opening is defined between two adjacent target patterns; forming a pyrolysis material layer on the substrate such that the pyrolysis material layer partially fills the opening and exposes an upper surface and a portion of a sidewall of the two adjacent target patterns; and forming a material layer on the exposed upper surface and the exposed portion of the sidewall of the two adjacent target patterns, wherein, during the forming of the material layer, the material layer does not remain on a resulting surface of the pyrolysis material layer.