公开(公告)号：US20170153814A1

公开(公告)日：2017-06-01

申请号：US15360144

申请日：2016-11-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHWAN Ryu ,  Youngjin Cho ,  Hee Hyun Nam ,  Han-Ju Lee

IPC: G06F3/06 ,  G11C14/00 ,  G06F12/02

CPC classification number: G06F3/061 ,  G06F3/0608 ,  G06F3/064 ,  G06F3/0655 ,  G06F3/0679 ,  G06F3/0685 ,  G06F12/0238 ,  G06F12/0246 ,  G06F2212/202 ,  G06F2212/401 ,  G11C11/005 ,  G11C11/1675 ,  G11C11/2275 ,  G11C13/0069 ,  G11C14/0036 ,  G11C14/0045 ,  G11C16/0483 ,  G11C16/10

Abstract: An access method of a storage device including heterogeneous nonvolatile memories includes receiving write-requested data; and writing the data in a first memory device or a second memory device based on a characteristic of the data, wherein the first memory device is capable of performing an overwrite operation and the second memory device is incapable of performing the overwrite operation.