公开(公告)号：US20190043768A1

公开(公告)日：2019-02-07

申请号：US15895208

申请日：2018-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Yu Sin Kim ,  Jae Woo Kim ,  Jin Young Bang ,  Doug Yong Sung ,  In Yong Hwang

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  G03F7/09

Abstract: Methods for fabricating semiconductor devices are provided including forming a stacked structure including a first mold layer and a second mold layer on a substrate; forming a first photoresist pattern on the stacked structure; etching the second mold layer using the first photoresist pattern as a mask; forming a second photoresist pattern by etching a portion of the first photoresist pattern; measuring a first fringe signal generated by an interference phenomenon between first reflected lights reflected from the first photoresist pattern; forming a stepped structure by etching the second mold layer and the first mold layer which is exposed, using the second photoresist pattern as a mask; measuring a second fringe signal generated by an interference phenomenon between second reflected lights reflected from the second mold layer; calculating a third fringe signal by summing the first fringe signal and the second fringe signal; calculating and a first etch rate of an upper surface of the first photoresist pattern using the third fringe signal; calculating a second etch rate of a side surface of the first photoresist pattern using the first etch rate; and controlling a degree of etching the side surface of the second photoresist pattern using the second etch rate.