公开(公告)号：US11282679B2

公开(公告)日：2022-03-22

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon Na ,  Hyosin Kim ,  Seungbo Shim ,  Hadong Jin ,  Dougyong Sung ,  Minyoung Hur

IPC: H01J37/32 ,  H03H7/40 ,  H03H7/01

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.