公开(公告)号：US11619876B1

公开(公告)日：2023-04-04

申请号：US17524210

申请日：2021-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun Lee

IPC: G03F1/24 ,  G03F7/20

Abstract: Disclosed is a system of inspecting a pattern defect in a scanning-type reflective extreme ultraviolet (EUV) mask. The system may include a photoelectron generator, a source light generator configured to generate a coherent EUV light from electrons generated by the photoelectron generator, a mask positioning structure configured to move the reflective EUV mask, an optic module placed on the mask positioning structure and configured to reflect and focus the EUV light, a zoneplate lens array configured to focus the EUV light on the reflective EUV mask, and a detection array placed near the zoneplate lens array to measure an energy of light reflected from the mask. The entire pattern region of the reflective EUV mask may be inspected by moving the reflective EUV mask using the mask positioning structure to more efficiently inspect a pattern defect in the EUV mask.

公开(公告)号：US20210249466A1

公开(公告)日：2021-08-12

申请号：US17027960

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongin Yang ,  Joosung Kim ,  Donggun Lee ,  Suhyun Jo

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.

公开(公告)号：US09466490B2

公开(公告)日：2016-10-11

申请号：US14740779

申请日：2015-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Kim ,  Chalykh Roman ,  Jongju Park ,  Donggun Lee ,  Seongsue Kim

IPC: H01L21/268 ,  H01L21/324 ,  B23K26/352 ,  B23K26/354 ,  H01L21/027 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  G03F1/24 ,  G02B27/09 ,  H01L21/033

CPC classification number: H01L21/268 ,  B23K26/037 ,  B23K26/06 ,  B23K26/064 ,  B23K26/073 ,  B23K26/352 ,  B23K26/354 ,  G02B27/0927 ,  G02B27/0955 ,  G02B27/0977 ,  G02B27/0988 ,  G03F1/24 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/324

Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

公开(公告)号：US12218274B2

公开(公告)日：2025-02-04

申请号：US17032332

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun Lee ,  Gibum Kim ,  Joosung Kim ,  Jonguk Seo

IPC: H01L33/24 ,  H01L25/16 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38

Abstract: A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.

公开(公告)号：US12027107B2

公开(公告)日：2024-07-02

申请号：US18222155

申请日：2023-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggun Lee ,  Punjae Choi ,  Youngjin Choi

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2300/0842 ,  G09G2320/0247 ,  G09G2320/0633

Abstract: A display apparatus includes a display panel including a plurality of pixels each having red, green, and blue LEDs; a display panel driver applying a current to each of the LEDs; a memory storing current intensity information according to target luminance of each of the LEDs; and a processor controlling the display panel driver to apply a current to each of the LEDs based on the current intensity information, wherein the processor is configured to control the display panel driver to apply an additional current to the green LED when a target luminance of the red LED is smaller than a predetermined luminance.

公开(公告)号：US11742469B2

公开(公告)日：2023-08-29

申请号：US17036090

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun Lee ,  Gibum Kim ,  Joosung Kim ,  Juhyun Kim ,  Tan Sakong ,  Jonguk Seo ,  Youngjo Tak

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/48 ,  H01L33/54 ,  H01L33/52 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/486 ,  H01L33/54

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.