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公开(公告)号:US11424388B2
公开(公告)日:2022-08-23
申请号:US16562791
申请日:2019-09-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee Choi , Kiho Kong , Jinjoo Park , Joohun Han , Kyungwook Hwang , Sungjin Kang , Junghun Park
Abstract: Provided is a light-emitting device including a substrate, a light-emitting pattern provided on the substrate, a first reflection film provided between the light-emitting pattern and the substrate, a second reflection film provided on a side surface of the light-emitting pattern, and a passivation film provided between the light-emitting pattern and the second reflection film, wherein the second reflection film is electrically connected to the light-emitting pattern, and a portion of light generated from the light-emitting pattern is emitted through an upper surface of the light-emitting pattern after being reflected by at least one of the first reflection film and the second reflection film.
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12.
公开(公告)号:US11362247B2
公开(公告)日:2022-06-14
申请号:US16842933
申请日:2020-04-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kiho Kong , Junhee Choi , Jinjoo Park , Joohun Han
Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.
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公开(公告)号:US11362136B2
公开(公告)日:2022-06-14
申请号:US16790206
申请日:2020-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kiho Kong , Junhee Choi
IPC: H01L27/14 , H01L27/15 , H01L27/12 , H01L49/02 , H01L33/36 , H01L33/62 , H01L33/06 , H01L33/32 , H01L33/44
Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.
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公开(公告)号:US20180018913A1
公开(公告)日:2018-01-18
申请号:US15587932
申请日:2017-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JEEHWAL KIM , Kiho Kong , Youngmin Kim , Wangsuk Sung , Euihyuk Jeong
IPC: G09G3/20
CPC classification number: G09G3/2092 , G09G2310/0243 , G09G2310/027 , G09G2310/0278 , G09G2310/0289 , G09G2310/0291 , G09G2320/0693 , G09G2330/028
Abstract: A display panel includes a display module including a plurality of pixels connected to gate lines and source lines and a driver module configured to apply driving voltages to the gate lines and the source lines. The driver module includes a driving voltage generator configured to generate the driving voltages and a calibration circuit configured to compare each of the driving voltages with a reference voltage and to output a calibration parameter according to a comparison result. The driving voltage generator calibrates each of the driving voltages using the calibration parameter.
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公开(公告)号:US12249671B2
公开(公告)日:2025-03-11
申请号:US17582172
申请日:2022-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee Choi , Nakhyun Kim , Joosung Kim , Eunsung Lee , Joohun Han , Kiho Kong , Junghun Park
Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.
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公开(公告)号:US12034032B2
公开(公告)日:2024-07-09
申请号:US18308895
申请日:2023-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joohun Han , Junhee Choi , Kiho Kong , Jinjoo Park , Nakhyun Kim , Junghun Park
CPC classification number: H01L27/156 , H01L33/0093 , H01L33/0095 , H01L33/007
Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.
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公开(公告)号:US11776988B2
公开(公告)日:2023-10-03
申请号:US17227981
申请日:2021-04-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee Choi , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC: H01L27/15
CPC classification number: H01L27/156
Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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18.
公开(公告)号:US20220271210A1
公开(公告)日:2022-08-25
申请号:US17743028
申请日:2022-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kiho Kong , Junhee Choi , Jinjo Park , Joohun Han
Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.
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公开(公告)号:US20220109021A1
公开(公告)日:2022-04-07
申请号:US17207105
申请日:2021-03-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kiho Kong , Junhee Choi
Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.
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公开(公告)号:US20200168663A1
公开(公告)日:2020-05-28
申请号:US16589359
申请日:2019-10-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junhee Choi , Sungjin Kang , Kiho Kong , Junghun Park , Jinjoo Park , Joohun Han , Kyungwook Hwang
Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.
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