Display device
    11.
    发明授权

    公开(公告)号:US12108621B2

    公开(公告)日:2024-10-01

    申请号:US17210614

    申请日:2021-03-24

    CPC classification number: H10K50/844 H10K59/122 H10K59/131 H10K59/38

    Abstract: A display device includes a substrate including a display area and a non-display area, a light emitting element disposed in the display area, an encapsulation layer covering the light emitting element, and a dam disposed in the non-display area and surrounding the display area. The dam includes a plurality of layers, and the plurality of layers include an organic layer that includes a portion that decreases and then increases in height toward an edge of the organic layer.

    Display device
    13.
    发明授权

    公开(公告)号:US12295220B2

    公开(公告)日:2025-05-06

    申请号:US17154922

    申请日:2021-01-21

    Abstract: A display device includes a substrate, a transistor, an interlayer insulating layer, a first conductive line, a pixel electrode, a passivation layer, a common electrode, and a light emitting element layer. The transistor overlaps the substrate. The interlayer insulating layer overlaps the transistor and includes a first groove. The first conductive line is electrically connected to the transistor and is at least partially disposed inside the first groove. The pixel electrode is electrically connected to the transistor and overlaps the first conductive line. The passivation layer is disposed between the pixel electrode and the first conductive line and directly contacts at least one of the pixel electrode and the first conductive line. The common electrode overlaps the pixel electrode. The light emitting element layer is disposed between the common electrode and the pixel electrode.

    EMISSIVE DISPLAY DEVICE INCLUDING A SCATTERING LAYER

    公开(公告)号:US20240215413A1

    公开(公告)日:2024-06-27

    申请号:US18482734

    申请日:2023-10-06

    CPC classification number: H10K59/8791 H10K59/122

    Abstract: An emissive display device includes a substrate. A first electrode is disposed on the substrate. A pixel defining layer has a first opening exposing the first electrode. A second electrode is disposed on both the pixel defining layer and the first electrode. An encapsulation layer at least partially covers the second electrode. A light blocking layer is disposed on the encapsulation layer and has a second opening. A color filter is disposed on the light blocking layer. A scattering layer is disposed within the second opening of the light blocking layer and includes a plurality of scattering particles. Particle density of the scattering particles has a value of 1 ea/mm3 or more and 10 ea/mm3 or less, and a diameter of the scattering particles is 0.1 μm or more and 1.5 μm or less.

    Display device
    17.
    发明授权

    公开(公告)号:US11563200B2

    公开(公告)日:2023-01-24

    申请号:US17196377

    申请日:2021-03-09

    Inventor: Jun Hee Lee

    Abstract: A display device includes a first semiconductor pattern on a substrate, a first insulating layer on the first semiconductor pattern, a first gate electrode on the first insulating layer, a second insulating layer on the first gate electrode, a second semiconductor pattern on the second insulating layer, a material of the second semiconductor pattern being different from that of the first semiconductor pattern, a third insulating layer on the second semiconductor pattern, a second gate electrode on the third insulating layer, a first planarization layer overlapping the second gate electrode, a second planarization layer on the first planarization layer and including a light blocking portion, and a pixel definition layer on the second planarization layer, wherein at least a portion of the pixel definition layer directly contacts the light blocking portion of the second planarization layer.

    Display device and manufacturing method thereof

    公开(公告)号:US11049921B2

    公开(公告)日:2021-06-29

    申请号:US16843489

    申请日:2020-04-08

    Abstract: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

    Organic light emitting diode display

    公开(公告)号:US10978537B2

    公开(公告)日:2021-04-13

    申请号:US15582908

    申请日:2017-05-01

    Abstract: An organic light emitting diode display includes a substrate, a plurality of pixels disposed on the substrate, a plurality of transmissive windows spaced apart from the pixels, and a light blocking member disposed between one of the pixels and one of the transmissive windows. The pixels display an image, and light is transmitted through the transmissive windows. Each pixel includes a transistor including a plurality of electrode members disposed in different layers on the substrate. The light blocking member includes a plurality of light blocking sub-members respectively disposed in the same layers as the plurality of electrode members.

    Thin film transistor, manufacturing method thereof, and display device having the same

    公开(公告)号:US10804299B2

    公开(公告)日:2020-10-13

    申请号:US16275829

    申请日:2019-02-14

    Abstract: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.

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