公开(公告)号：US20230215983A1

公开(公告)日：2023-07-06

申请号：US18093959

申请日：2023-01-06

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Yun Hyuk KO ,  Dong Uk KIM ,  Na Ri AHN ,  Chang Hee LEE ,  Do Hyung KIM ,  Ran KIM ,  In Pyo KIM ,  Ki Young YEON ,  Je Won YOO ,  Joo Hee LEE ,  Sang Ho JEON ,  Jung Woon JUNG ,  Chan Woo JOO ,  Jin Young CHOI ,  Na Mi HONG ,  Jong Il KIM ,  Jin Ho BYUN ,  Sang Ho OH ,  Jae Kwang LEE ,  Yong Seok CHOI ,  Jong Hoon HA

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0016

Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.

公开(公告)号：US20230163234A1

公开(公告)日：2023-05-25

申请号：US17967177

申请日：2022-10-17

Applicant: Samsung Display Co., LTD.

Inventor： Jae Woong YOO ,  Jin Hyuk JANG ,  Sung Hwi PARK ,  Sang Ho JEON ,  Seon Hong CHOI

IPC: H01L33/02 ,  H01L27/15 ,  H01L33/14 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/025 ,  H01L27/156 ,  H01L33/145 ,  H01L33/24 ,  H01L33/44

Abstract: A light emitting element includes a light emitting element core including a first area and a second area surrounding the first area. The light emitting element core includes a first semiconductor layer doped with a first dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a second dopant, an element active layer disposed between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer disposed between the element active layer and the second semiconductor layer and doped with the second dopant. The second area of the light emitting element core is located on an outer circumference of the light emitting element core and includes an outer surface of the light emitting element core. A doping concentration of the second dopant of the third semiconductor layer is lower than a defect density of the second area of the light emitting element core.

公开(公告)号：US20220344536A1

公开(公告)日：2022-10-27

申请号：US17585864

申请日：2022-01-27

Applicant: Samsung Display Co., LTD.

Inventor： Won Ho LEE ,  Seung A LEE ,  Jin Hyuk JANG ,  Jong Hyuk KANG ,  Hyun Deok IM ,  Sang Ho JEON ,  Eun A CHO ,  Hyun Min CHO

IPC: H01L33/02 ,  H01L25/16

Abstract: A light-emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulating film that surrounds the first semiconductor layer, the second semiconductor layer, and the light emitting layer. A doping concentration of the first semiconductor layer is in a predetermined range. A display device includes the light-emitting element.