公开(公告)号：US09105733B2

公开(公告)日：2015-08-11

申请号：US13897879

申请日：2013-05-20

Applicant: Samsung Display Co., Ltd.

Inventor： Young-Wook Lee ,  Woo-Geun Lee ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Ji-Soo Oh

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/124 ,  H01L21/76834 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.

Abstract translation: 提供薄膜晶体管（TFT）阵列基板及其制造方法。 TFT阵列基板可以包括设置在基板上的栅极线，包括栅极线和栅电极，设置在栅电极上的氧化物半导体层图案，设置在氧化物半导体层图案上的数据线，并且包括源电极和 薄膜晶体管（TFT）的漏电极和栅极电极以及沿着与栅极线相交的方向延伸的数据线，以及设置在源极/漏极之间形成TFT的区域的蚀刻停止图案，以及 氧化物半导体层图案和栅极线与数据线在栅极线与数据线之间重叠的区域。