Abstract:
A display device includes: a plurality of first electrode patterns; a plurality of second electrode patterns; a plurality of first touch signal lines; and a plurality of second touch signal lines. The plurality of first electrode patterns respectively include a plurality of first electrode cells physically separated from each other and arranged in a first direction. The plurality of second electrode patterns include a plurality of second electrode cells physically separated from each other and arranged in a second direction crossing the first direction. The plurality of first touch signal lines are connected to the first electrode cells. The plurality of second touch signal lines are connected to the second electrode cells. The first and second electrode patterns and the first and second touch signal lines are all positioned at the same layer on a substrate. The first touch signal lines are independently connected to each first electrode cell.
Abstract:
A touch screen including a substrate that includes an active area and a non-active area adjacent to the active area, the active area including at least one fingerprint recognition area; touch sensing electrodes including first sensing electrodes arranged in the active area, and at least one second sensing electrode arranged in the fingerprint recognition area, the second sensing electrode configured for sensing a touch and recognizing a fingerprint; and a pad portion provided with a plurality of pads which are electrically connected to respective sensing electrodes, wherein the at least one second sensing electrode includes: a plurality of sub electrodes extending in a direction inclined with respect to an edge portion of the active area; and a plurality of fingerprint recognition lines connecting the sub electrodes to the pad portion, and the fingerprint recognition lines arranged in a same fingerprint recognition area extend in a same direction.
Abstract:
A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and an upper layer. A first passivation layer contacts the lower layer of the source and drain electrodes but does not contact the upper layer of the source and drain electrodes, and a second passivation layer is disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride.