Abstract:
A light emitting diode (LED), includes: a substrate; a first electrode connection line disposed on the substrate; a second electrode connection line disposed on the substrate; a first contact metal layer disposed on the first electrode connection line; a second contact metal layer disposed on the second electrode connection line; a light emitting unit disposed on the first contact metal layer and the second contact metal layer; a partition disposed on the substrate and about the light emitting unit; and an encapsulation layer covering the light emitting unit. The encapsulation layer includes a light conversion material.
Abstract:
An exemplary embodiment of the present invention provides a display device including red pixels, blue pixels, green pixels, and white pixels, a plurality of gate lines, and a plurality of data lines, wherein the red pixels, the blue pixels, and the green pixels are disposed to longitudinally extend in a vertical direction, and the white pixels are disposed to longitudinally extend in a horizontal direction below or above the red pixels, the blue pixels, and the green pixels.
Abstract:
A curved liquid crystal display includes: a first region including a first color pixel area, a second color pixel area, a third color pixel area, and a white pixel area; and a second region excluding the first region, the second region including the first color pixel area, the second color pixel area, and the third color pixel area. The curved liquid crystal display includes: a first substrate and a second substrate that are bent, and a liquid crystal layer is disposed between the first substrate and the second substrate.
Abstract:
Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.