公开(公告)号：US20140363921A1

公开(公告)日：2014-12-11

申请号：US14468472

申请日：2014-08-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG SU LEE ,  YOON HO KHANG ,  DONGJO KIM ,  HYUN JAE NA ,  SANG HO PARK ,  SE HWAN YU ,  CHONG SUP CHANG

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/385 ,  H01L21/02 ,  H01L21/441

CPC classification number: H01L29/7869 ,  H01L21/0262 ,  H01L21/385 ,  H01L21/441 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78696

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.