公开(公告)号：US20240099114A1

公开(公告)日：2024-03-21

申请号：US18518622

申请日：2023-11-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Sik KIM ,  Jae Ik KIM ,  Jung Sun PARK ,  Seung Yong SONG ,  Duck Jung LEE ,  Yeon Hwa LEE ,  Joon Gu LEE ,  Kyu Hwan HWANG

IPC: H10K71/00 ,  H10K50/822 ,  H10K50/844

CPC classification number: H10K71/00 ,  H10K50/822 ,  H10K50/844 ,  H10K59/35

Abstract: A display device may include a first electrode, a second electrode, an emission layer, an intervening layer, and a first encapsulation layer. The second electrode may overlap the first electrode. The emission layer may be disposed between the first electrode and the second electrode, may overlap the first electrode, and may include a light emitting material. The intervening layer may directly contact the second electrode, may be spaced from each of the first electrode and the emission layer, and may include a fluorine compound. A first section of the first encapsulation layer may overlap the emission layer. The intervening layer may be positioned between the second electrode and a second section of the first encapsulation layer.

公开(公告)号：US20210288122A1

公开(公告)日：2021-09-16

申请号：US17019445

申请日：2020-09-14

Applicant: Samsung Display Co., LTD.

Inventor： Jae Sik KIM ,  Woo Yong SUNG ,  Byoung Kwon CHOO

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A display device includes: a substrate; an inorganic insulating layer disposed on the substrate; a conductor disposed on the inorganic insulating layer; and an organic insulating layer disposed on the conductor, where an opening is defined through the organic insulating layer to expose a part of the upper surface of the conductor, and at least one material selected from a siloxane, a thiol, a phosphate, a disulfide including a sulfur series, and an amine is bonded on the part of the upper surface of the conductor exposed through the opening.

公开(公告)号：US20180040843A1

公开(公告)日：2018-02-08

申请号：US15613728

申请日：2017-06-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joon Gu LEE ,  Jae Sik KIM ,  Yeon Hwa LEE ,  Se Hoon JEONG

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/506 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/0097 ,  H01L51/5072 ,  H01L51/508 ,  H01L51/5088 ,  H01L51/5237

Abstract: Disclosed is an organic light emitting diode, including a cathode electrode and an anode electrode positioned above the cathode electrode. An emitting layer is positioned between the cathode electrode and the anode electrode. An electron transporting unit is positioned between the cathode electrode and the emitting layer. The electron transporting unit is configured to inject and transport electrons to the emitting layer. A buffer layer is disposed between the cathode electrode and the electron transporting unit. The buffer layer includes an organic layer and a metallic layer disposed on the organic layer.

公开(公告)号：US20140203275A1

公开(公告)日：2014-07-24

申请号：US14020695

申请日：2013-09-06

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Sik KIM

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin-film transistor includes a substrate, a gate electrode formed over the substrate, a gate insulating layer formed over the gate electrode and the substrate, an oxide semiconductor layer formed over the gate insulating layer and comprising a source section and a drain section, a first electrode formed over the substrate and electrically connected to the source section, and a second electrode formed over the substrate and electrically connected to the drain section. The thin-film transistor further includes a first barrier layer disposed between the oxide semiconductor layer and the first electrode, a second barrier layer disposed between the first barrier layer and the first electrode, and the first electrode being electrically connected to the oxide semiconductor layer via the first barrier layer and the second barrier layer.

Abstract translation: 薄膜晶体管包括基板，形成在基板上的栅电极，形成在栅电极和基板上的栅极绝缘层，形成在栅极绝缘层上并包括源极部分和漏极部分的氧化物半导体层， 形成在所述基板上并电连接到所述源极部分的第一电极，以及形成在所述基板上并电连接到所述漏极部分的第二电极。 薄膜晶体管还包括设置在氧化物半导体层和第一电极之间的第一阻挡层，设置在第一阻挡层和第一电极之间的第二阻挡层，并且第一电极通过电连接到氧化物半导体层 第一阻挡层和第二阻挡层。