公开(公告)号：US11728371B2

公开(公告)日：2023-08-15

申请号：US17716492

申请日：2022-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye Yeon ,  Hanul Yoo ,  Jihoon Yun ,  Suhyun Jo

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L33/00 ,  H01L27/12 ,  H01L23/00

CPC classification number: H01L27/156 ,  H01L24/08 ,  H01L24/89 ,  H01L25/18 ,  H01L27/124 ,  H01L27/1248 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/382 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80001 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

公开(公告)号：US11380818B2

公开(公告)日：2022-07-05

申请号：US15932000

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Hankyu Seong ,  Sunghyun Sim ,  Jihye Yeon ,  Hanul Yoo ,  Jihoon Yun

IPC: H01L33/24 ,  H01L33/50 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L27/15 ,  H01L33/00

Abstract: A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.

公开(公告)号：US10991857B2

公开(公告)日：2021-04-27

申请号：US16442870

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Tae Lim ,  Sung Hyun Sim ,  Hanul Yoo ,  Yong Il Kim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/50 ,  H01L25/075 ,  H01L27/15 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L33/44

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

公开(公告)号：US10475957B2

公开(公告)日：2019-11-12

申请号：US16190538

申请日：2018-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L33/08 ,  G09G3/20 ,  H01L33/38 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  G09G3/32 ,  H01L33/46 ,  H01L33/62

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

公开(公告)号：US10333035B2

公开(公告)日：2019-06-25

申请号：US15337215

申请日：2016-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Sung Hyun Sim ,  Wan tae Lim ,  Hye Seok Noh ,  Hanul Yoo

IPC: H01L33/50 ,  H01L33/60 ,  H01L27/15

Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.

公开(公告)号：US10217914B2

公开(公告)日：2019-02-26

申请号：US15163204

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Wan Tae Lim ,  Yong Il Kim ,  Hye Seok Noh ,  Eun Joo Shin ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L29/49 ,  H01L33/58 ,  H01L33/50 ,  H01L33/44 ,  H01L33/00 ,  F21Y103/10 ,  F21Y115/10 ,  F21S8/02 ,  F21V23/00 ,  F21K9/275 ,  F21K9/237

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.