公开(公告)号：US20150041821A1

公开(公告)日：2015-02-12

申请号：US14330995

申请日：2014-07-14

Applicant: Renesas Electronics Corporation

Inventor： Tatsuo Nakayama ,  Masaaki Kanazawa ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Hironobu Miyamoto ,  Ryohei Nega

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/452 ,  H01L29/66522 ,  H01L29/7786 ,  H01L29/78

Abstract: An electrode comes in ohmic contact with an AlGaN layer. A semiconductor device SD has a nitride semiconductor layer GN2, and an AlxGa(1−x)N layer AGN (hereinafter referred to as “AlGaN layer AGN), and Al electrodes DE, SE. in the AlGaN layer AGN, 0

Abstract translation: 电极与AlGaN层欧姆接触。 半导体器件SD具有氮化物半导体层GN2和Al x Ga（1-x）N层AGN（以下称为“AlGaN层AGN”）和Al电极DE，SE。 在AlGaN层AGN中，满足0