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公开(公告)号：US20210130958A1
公开(公告)日：2021-05-06
申请号：US16878582
申请日：2020-05-19
发明人： Jyun-De Wu , Yen-Lin Lai , Chi-Heng Chen
IPC分类号： C23C16/46 , C23C16/458
摘要： A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate by taking the rotating axis as a center. The plurality of first heaters is disposed under a first heating region of the rotating stage. There is a first spacing between any two adjacent first heaters. The at least one second heater is disposed under a second heating region of the rotating stage. There is a spacing between the second heating region and the first heating region, and the spacing is not equal to the first spacing. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
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公开(公告)号：US20210130957A1
公开(公告)日：2021-05-06
申请号：US16868539
申请日：2020-05-07
发明人： Jyun-De Wu , Yen-Lin Lai , Chi-Heng Chen
IPC分类号： C23C16/46 , C23C16/458
摘要： A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
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公开(公告)号：US20240097070A1
公开(公告)日：2024-03-21
申请号：US17976870
申请日：2022-10-31
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
CPC分类号： H01L33/12 , H01L33/025 , H01L33/30
摘要： A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.
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公开(公告)号：US11567124B2
公开(公告)日：2023-01-31
申请号：US16896280
申请日：2020-06-09
发明人： Jyun-De Wu , Yen-Lin Lai , Chi-Heng Chen
IPC分类号： G01R31/302 , H01L33/00
摘要： Herein disclosed are a wafer, a wafer testing system, and a method thereof. Said wafer testing method comprises the following steps. First, an incident light is provided toward a wafer. And, a wafer surface image corresponded to the wafer is generated. Then, determining whether the wafer surface image has a plurality of first strips and a plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical. When the wafer surface image has the plurality of first strips and the plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical, a qualified signal corresponded to the wafer is provided.
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公开(公告)号：US20200373460A1
公开(公告)日：2020-11-26
申请号：US16669526
申请日：2019-10-31
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai
IPC分类号： H01L33/20
摘要： A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone and the second zone are disposed in a concentric manner. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
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公开(公告)号：US20240128398A1
公开(公告)日：2024-04-18
申请号：US17994016
申请日：2022-11-25
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
CPC分类号： H01L33/0062 , H01L33/06 , H01L33/30
摘要： An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.
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公开(公告)号：US20230340669A1
公开(公告)日：2023-10-26
申请号：US18342727
申请日：2023-06-27
发明人： Jyun-De Wu , Yen-Lin Lai , Chi-Heng Chen
IPC分类号： C23C16/46 , C23C16/458
CPC分类号： C23C16/46 , C23C16/4584
摘要： A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate around a rotating axis of the rotating stage. The plurality of first heaters is disposed under a first heating region, each have a first width Wa. There is a first spacing Sa between any two adjacent first heaters. The at least one second heater is disposed under a second heating region, and has a second width Wb. There is a smallest spacing Sab between the at least one second heater and the first heating region, and Wa, Wb, Sa and Sab satisfy the equation: Wa/(Wa+Sa) ≥ Wb/(Wb+Sab). Each wafer carrier overlaps the first heating region in the axial direction of the rotating axis.
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公开(公告)号：US11495709B2
公开(公告)日：2022-11-08
申请号：US17243577
申请日：2021-04-29
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai , Shen-Jie Wang , Sheng-Yuan Sun
摘要： A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
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公开(公告)号：US11329192B2
公开(公告)日：2022-05-10
申请号：US16868883
申请日：2020-05-07
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
摘要： The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
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公开(公告)号：US20220064791A1
公开(公告)日：2022-03-03
申请号：US17523914
申请日：2021-11-11
发明人： Shen-Jie Wang , Yen-Lin Lai , Jyun-De Wu , Chien-Chih Yen
IPC分类号： C23C16/458
摘要： A wafer carrier including a rotation axis, a center flat region, a wafer distributing region and a plurality of wafer accommodating grooves is provided. The rotation axis passes through a center of the center flat region and a surface of the center flat region is a flat surface. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region and arranged in a single virtual loop. A diameter of each of the wafer accommodating grooves is D, and a radius of the center flat region is larger than 0.5D. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.
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