公开(公告)号：US20180190706A1

公开(公告)日：2018-07-05

申请号：US15909413

申请日：2018-03-01

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Mitsuyoshi MORI ,  Ryohei MIYAGAWA ,  Yoshiyuki OHMORI ,  Yoshihiro SATO ,  Yutaka HIROSE ,  Yusuke SAKATA ,  Toru OKINO

IPC: H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

公开(公告)号：US20170345865A1

公开(公告)日：2017-11-30

申请号：US15678790

申请日：2017-08-16

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO, LTD.

Inventor： Yusuke SAKATA ,  Mitsuyoshi MORI ,  Yutaka HIROSE ,  Hiroshi MASUDA ,  Hitoshi KURIYAMA ,  Ryohei MIYAGAWA

IPC: H01L27/148 ,  H01L27/146 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L27/14806 ,  H01L21/76886 ,  H01L23/485 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14665 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

公开(公告)号：US20170229599A1

公开(公告)日：2017-08-10

申请号：US15328648

申请日：2015-07-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yusuke SAKATA ,  Manabu USUDA ,  Mitsuyoshi MORI ,  Yutaka HIROSE ,  Yoshihisa KATO

IPC: H01L31/107 ,  H01L27/146

CPC classification number: H01L31/1075 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/107 ,  H02S40/44

Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.