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公开(公告)号：US11094734B2
公开(公告)日：2021-08-17
申请号：US16909070
申请日：2020-06-23
Inventor： Junji Hirase , Yoshinori Takami , Shota Yamada , Yoshihiro Sato , Yoshiaki Satou
IPC: H01L27/146 , H01L27/148 , H04N5/357 , H04N5/3745 , H04N5/363 , H04N5/378
Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.
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公开(公告)号：US10734432B2
公开(公告)日：2020-08-04
申请号：US16038896
申请日：2018-07-18
Inventor： Junji Hirase , Yoshinori Takami , Shota Yamada , Yoshihiro Sato , Yoshiaki Satou
IPC: H01L27/146 , H01L27/148 , H04N5/357 , H04N5/3745 , H04N5/363 , H04N5/378
Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.
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公开(公告)号：US10325945B2
公开(公告)日：2019-06-18
申请号：US15878902
申请日：2018-01-24
Inventor： Masashi Murakami , Kazuko Nishimura , Yutaka Abe , Yoshiyuki Matsunaga , Yoshihiro Sato , Junji Hirase
IPC: H01L27/146 , H01L51/42
Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.
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公开(公告)号：US09773825B2
公开(公告)日：2017-09-26
申请号：US14565212
申请日：2014-12-09
Inventor： Junji Hirase , Yoshiyuki Matsunaga , Yoshihiro Sato
IPC: H01L23/48 , H01L27/146 , H04N5/363 , H04N5/378 , H01L51/42
CPC classification number: H01L27/14614 , H01L27/1461 , H01L27/14612 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14669 , H01L51/428 , H04N5/363 , H04N5/378
Abstract: Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.
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公开(公告)号：US09402040B2
公开(公告)日：2016-07-26
申请号：US14666200
申请日：2015-03-23
Inventor： Masayuki Takase , Yoshihiro Sato , Junji Hirase , Tokuhiko Tamaki
IPC: H04N5/369 , G02B13/00 , H04N5/232 , H01L27/146
CPC classification number: H04N5/369 , G02B13/0015 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14665 , H04N5/23212 , H04N5/3696
Abstract: A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions.
Abstract translation: 固态成像装置具有多个成像目的像素和多个焦点检测目的像素。 每个成像目的像素设置有形成在第一下电极上的第一下电极，光电转换膜和形成在光电转换膜上的上电极。 每个焦点检测目的像素设置有第二下部电极，形成在第二下部电极上的光电转换膜和形成在光电转换膜上的上部电极。 第二下部电极的面积小于第一下部电极的面积。 第二下电极设置在偏离对应的焦点检测像素的像素中心的位置，并且与多个焦点检测目的像素中包括的两个焦点检测目的像素相对应的两个第二下部电极被布置在相互相反的方向上。
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Patent Agency Ranking
16.发明授权公开(公告)号：US12176374B2
公开(公告)日：2024-12-24
申请号：US17322960
申请日：2021-05-18
Inventor： Yoshihiro Sato , Yoshinori Takami
IPC: H01L27/146
Abstract: An imaging device includes a semiconductor substrate, a photoelectric converter that converts incident light into a charge, a first impurity region located in the semiconductor substrate, where the first impurity region accumulates the charge and contains impurities of a first conductivity type, a second impurity region located in the semiconductor substrate, where the second impurity region contains impurities of the first conductivity type and is different from the first impurity region, a third impurity region located in the semiconductor substrate, between the first impurity region and the second impurity region in plan view, where the third impurity region contains impurities of a second conductivity type that differs from the first conductivity type, and a first contact located on the semiconductor substrate and electrically connected to the third impurity region. The first contact includes a semiconductor containing impurities of the second conductivity type.
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公开(公告)号：US11670652B2
公开(公告)日：2023-06-06
申请号：US17712873
申请日：2022-04-04
Inventor： Masashi Murakami , Kazuko Nishimura , Yutaka Abe , Yoshiyuki Matsunaga , Yoshihiro Sato , Junji Hirase
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14665 , H01L27/14636 , H01L51/42
Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.
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公开(公告)号：US10770491B2
公开(公告)日：2020-09-08
申请号：US16401974
申请日：2019-05-02
Inventor： Masashi Murakami , Kazuko Nishimura , Yutaka Abe , Yoshiyuki Matsunaga , Yoshihiro Sato , Junji Hirase
IPC: H01L27/146 , H01L51/42
Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.
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公开(公告)号：US10593714B2
公开(公告)日：2020-03-17
申请号：US16033723
申请日：2018-07-12
Inventor： Yoshihiro Sato , Junji Hirase , Yoshinori Takami
IPC: H01L27/146 , H01L27/30 , H04N5/378
Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.
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公开(公告)号：US10446549B2
公开(公告)日：2019-10-15
申请号：US16384575
申请日：2019-04-15
Inventor： Yoshihiro Sato , Ryota Sakaida , Satoshi Shibata , Taiji Noda
IPC: H01L27/092 , H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.
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