公开(公告)号：US10103187B2

公开(公告)日：2018-10-16

申请号：US14973017

申请日：2015-12-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Chin-Chang Pai

IPC: H04N5/369 ,  H04N5/363 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

公开(公告)号：US20170180662A1

公开(公告)日：2017-06-22

申请号：US14973017

申请日：2015-12-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Chin-Chang Pai

IPC: H04N5/378 ,  H04N5/374 ,  H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14616 ,  H01L27/14645 ,  H04N5/363 ,  H04N5/3698 ,  H04N5/37457

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

公开(公告)号：US09491386B2

公开(公告)日：2016-11-08

申请号：US14559733

申请日：2014-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Duli Mao ,  Han Lei Lock ,  Qingwei Shan

IPC: H04N5/374 ,  H04N5/378 ,  H04N5/63 ,  H04N5/335

CPC classification number: H04N5/3741 ,  H04N5/335 ,  H04N5/378 ,  H04N5/63

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract translation: 通过在复位操作期间接通像素单元的复位晶体管以将浮动扩散充电到第一复位电平来提高像素单元中的复位电平。 在浮动扩散复位操作期间，选择晶体管从OFF切换到ON，以放大放大器晶体管的输出端。 在放大晶体管的输出端已响应于选择晶体管的导通而放电之后，复位晶体管截止。 放大器晶体管的输出端子在放电后充电到静态电平。 耦合到放大器晶体管的输入端的浮动扩散器沿着放大器晶体管的输出端连接放大器电容，该放大器电容耦合在放大器晶体管的输入端和输出端之间，以提高浮置扩散的复位电平。

公开(公告)号：US09380234B1

公开(公告)日：2016-06-28

申请号：US14702323

申请日：2015-05-01

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Han Lei Lock

IPC: H04N5/335 ,  H04N5/363 ,  H04N5/374 ,  H04N5/378 ,  H04N5/357

CPC classification number: H04N5/3575 ,  H04N5/378

Abstract: A reduced random telegraph signal (RTS)-noise CMOS image sensor includes a pixel and a correlated double sampling (CDS) circuit electrically connected to the pixel. The CDS circuit is characterized by a CDS period that includes a reference sample period and an image data sample period. The image sensor also includes a bitline, a bitline connection switch between the pixel and a readout circuit connected to the pixel, and a bitline switch controller. The bitline transmits a transfer gate signal as a bitline signal having a non-zero value during a first time period entirely between the reference sample period and the image data sample period. The bitline switch controller is electrically connected to and configured to control the bitline connection switch such that the bitline connection switch is closed during the entire CDS period except for a single continuous open period that includes the first time period.

Abstract translation: 减少的随机电报信号（RTS） - 噪声CMOS图像传感器包括电连接到像素的像素和相关双采样（CDS）电路。 CDS电路的特征在于包括参考采样周期和图像数据采样周期的CDS周期。 图像传感器还包括位线，像素与连接到像素的读出电路之间的位线连接开关和位线开关控制器。 该位线在第一时间段内完全在参考采样周期和图像数据采样周期之间传输传输门信号作为具有非零值的位线信号。 位线开关控制器电连接到并配置成控制位线连接开关，使得除了包括第一时间段的单个连续打开周期之外，在整个CDS期间位线连接开关是关闭的。

公开(公告)号：US09123604B2

公开(公告)日：2015-09-01

申请号：US14056132

申请日：2013-10-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

IPC: H01L31/12 ,  H01L27/12 ,  H01L31/06 ,  H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。