公开(公告)号：US20240162684A1

公开(公告)日：2024-05-16

申请号：US18068248

申请日：2022-12-19

Applicant: Lumentum Operations LLC

Inventor： Matthew Glenn PETERS ,  Jun YANG ,  Guowei ZHAO

IPC: H01S5/183 ,  H01S5/30

CPC classification number: H01S5/18311 ,  H01S5/3095

Abstract: In some implementations, an optical emitter includes a set of light emitting junctions; and a set of tunnel junctions separating the set of light emitting junctions, wherein a first light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a first wavelength, and wherein a second light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a second wavelength that is different from the first wavelength.

公开(公告)号：US20230102622A1

公开(公告)日：2023-03-30

申请号：US17453060

申请日：2021-11-01

Applicant: Lumentum Operations LLC

Inventor： Benjamin KESLER ,  Guowei ZHAO

IPC: H01S5/42 ,  H01S5/183 ,  H01S5/34 ,  H01S5/042

Abstract: A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.

公开(公告)号：US20210399525A1

公开(公告)日：2021-12-23

申请号：US17135511

申请日：2020-12-28

Applicant: Lumentum Operations LLC

Inventor： Guowei ZHAO ,  Matthew Glenn PETERS ,  Jun YANG ,  Eric R. HEGBLOM

IPC: H01S5/183 ,  H01S5/34 ,  H01S5/042 ,  H01S5/42

Abstract: A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

公开(公告)号：US20210367407A1

公开(公告)日：2021-11-25

申请号：US16948763

申请日：2020-09-30

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Guowei ZHAO ,  Matthew Glenn PETERS ,  Eric R. HEGBLOM ,  Ajit Vijay BARVE ,  Benjamin KESLER

IPC: H01S5/34 ,  H01S5/183 ,  H01S5/042

Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.