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公开(公告)号：US10074784B2
公开(公告)日：2018-09-11
申请号：US14596806
申请日：2015-01-14
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
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公开(公告)号：US20160181487A1
公开(公告)日：2016-06-23
申请号：US14596806
申请日：2015-01-14
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
摘要翻译： 在各种实施例中，刚性透镜通过具有不足以防止刚性透镜和半导体裸片之间的热膨胀失配诱导应变传播的厚度的密封剂层附着到发光半导体管芯。
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公开(公告)号：US08962359B2
公开(公告)日：2015-02-24
申请号：US13553093
申请日：2012-07-19
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
摘要翻译： 在各种实施例中，刚性透镜通过具有不足以防止刚性透镜和半导体裸片之间的热膨胀失配诱导应变传播的厚度的密封剂层附着到发光半导体管芯。
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公开(公告)号：US20140203311A1
公开(公告)日：2014-07-24
申请号：US13553093
申请日：2012-07-19
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
摘要翻译： 在各种实施例中，刚性透镜通过具有不足以防止刚性透镜和半导体裸片之间的热膨胀失配诱导应变传播的厚度的密封剂层附着到发光半导体管芯。
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公开(公告)号：US11913136B2
公开(公告)日：2024-02-27
申请号：US18093428
申请日：2023-01-05
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
CPC分类号： C30B29/403 , C01B21/072 , C30B23/002 , C30B23/066 , H01L33/0075 , H01L21/02389 , H01S5/0217 , H01S5/3013 , H01S5/34333
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号：US11578425B2
公开(公告)日：2023-02-14
申请号：US17082611
申请日：2020-10-28
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号：US10954608B2
公开(公告)日：2021-03-23
申请号：US16185830
申请日：2018-11-09
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号：US11828002B2
公开(公告)日：2023-11-28
申请号：US17181138
申请日：2021-02-22
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： C30B23/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
CPC分类号： C30B29/403 , C01B21/072 , C30B23/002 , C30B23/066 , H01L33/0075 , H01L21/02389 , H01S5/0217 , H01S5/3013 , H01S5/34333
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号：US10851474B2
公开(公告)日：2020-12-01
申请号：US16714939
申请日：2019-12-16
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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20.发明授权公开(公告)号：US10777706B2
公开(公告)日：2020-09-15
申请号：US16161320
申请日：2018-10-16
申请人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
发明人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
摘要： In various embodiments, an electrochemical process is utilized to remove at least a portion of a substrate from multiple singulated or unsingulated electronic-device or optoelectronic-device dies. The dies may be attached to a submount for the removal process, and the dies may be immersed in or non-immersively contact an electrolyte during the removal process.
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