公开(公告)号：US20170358488A1

公开(公告)日：2017-12-14

申请号：US15247817

申请日：2016-08-25

Applicant: Korea Advanced Institute of Science and Technology ,  Lam Research Corporation

Inventor： Byung Jin Cho ,  Sung Gap Im ,  Seong Jun Yoon ,  Kwanyong Pak ,  Hyungsuk Alexander Yoon

IPC: H01L21/768

CPC classification number: H01L21/02321 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/76829

Abstract: Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

公开(公告)号：US09472675B2

公开(公告)日：2016-10-18

申请号：US14256895

申请日：2014-04-18

Applicant: Korea Advanced Institute of Science and Technology ,  Lam Research Corporation

Inventor： Byung Jin Cho ,  Jae Hoon Bong ,  Onejae Sul ,  Hyungsuk Alexander Yoon

IPC: H01L29/786 ,  H01L21/22 ,  H01L21/228 ,  H01L29/16

CPC classification number: H01L29/78684 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.

Abstract translation: 本公开内容涉及使用氟化铵（NH 4 F）制造n掺杂石墨烯的方法和由此形成的石墨烯和电气部件的方法。 制造n掺杂石墨烯的示例性方法包括（a）制备石墨烯和氟化铵（NH 4 F）; 和（b）将石墨烯暴露于氟化铵（NH 4 F）中，其中通过（b）在石墨烯层的上表面和下表面的一部分或全部上形成氟层，并将铵离子物理吸附到部分或全部 石墨烯层的上表面和下表面或石墨烯层的碳原子之间的缺陷，由此维持或进一步改善石墨烯的优异的电性能，包括电荷迁移率，同时进行石墨烯的n掺杂。