专利检索 ap:("KYOCERA SLD Laser, Inc.") AND inv:"Hua Huang" 第 2 页

11.

发明授权
Facet on a gallium and nitrogen containing laser diode 有权

公开(公告)号：US11121522B1

公开(公告)日：2021-09-14

申请号：US15789413

申请日：2017-10-20

申请人： KYOCERA SLD Laser, Inc.

发明人： James W. Raring , Hua Huang

IPC分类号： H01S5/028 , H01S5/02 , H01S5/042 , H01S5/343 , H01S5/32 , H01S5/22 , H01S5/20

摘要： Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.