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    Thickness change monitor wafer for in situ film thickness monitoring
    13.
    发明授权
    Thickness change monitor wafer for in situ film thickness monitoring 有权
    厚度变化监测晶圆用于原位膜厚监测

    公开(公告)号：US09305753B2

    公开(公告)日：2016-04-05

    申请号：US14195390

    申请日：2014-03-03

    Applicant: KLA-Tencor Corporation

    Inventor： Earl Jensen ,  Kevin O'Brien

    IPC: G01B11/02 ,  H01J37/32 ,  G01B11/06

    CPC classification number: H01J37/32935 ,  G01B11/0625 ,  G01B11/0675 ,  G01B11/0683 ,  H01J37/32972

    Abstract: An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    Abstract translation: 蚀刻速率监测装置具有衬底，光学元件和安装到公共衬底的一个或多个光学检测器，其中一个或多个检测器夹在衬底和光学元件之间，以检测由光学厚度的变化引起的光学干涉信号的变化 光学元件。 光学元件由允许感兴趣的波长的光的透射的材料制成。 可以使用设备收集参考波形和数据波形，并进行交叉相关，以确定厚度变化。 提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Method and System for Measuring Heat Flux
    14.
    发明申请
    Method and System for Measuring Heat Flux 有权
    测量热通量的方法和系统

    公开(公告)号：US20140355643A1

    公开(公告)日：2014-12-04

    申请号：US14290255

    申请日：2014-05-29

    Applicant: KLA-Tencor Corporation

    Inventor： Stephen Sharratt ,  Farhat Quli ,  Earl Jensen ,  Mei Sun

    IPC: G01K7/00 ,  G01K15/00

    CPC classification number: G01K19/00 ,  G01K17/00

    Abstract: A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

    Abstract translation: 配备有热量传感器的测量晶片包括基板，热耦合到基板的一部分的盖，形成在基板和盖之间的传感器腔，设置在传感器腔的至少一部分内的热障，底部温度 传感器热耦合到衬底并且由热屏障的一部分与盖隔离，并且顶部温度传感器热耦合到盖并通过热障的另外部分与衬底绝缘，其中底部温度 传感器和顶部温度传感器与通过基板和靠近传感器腔的盖子的热通量有关。

    Position sensitive substrate device
    16.
    发明授权
    Position sensitive substrate device 有权

    公开(公告)号：US09620400B2

    公开(公告)日：2017-04-11

    申请号：US14536428

    申请日：2014-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Earl Jensen ,  Kevin O'Brien

    IPC: G01B11/14 ,  H01L21/68

    CPC classification number: H01L21/68 ,  H01L21/681

    Abstract: Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the substrate device on the substrate support surface. The substrate device and the substrate support surface may have counterpart coarse position units and fine position units. The system may measure coarse positional offsets between the first and second coarse position units, re-position the substrate device on the substrate support surface based on the coarse positional offsets, and subsequently measure fine positional offsets between the first and second fine position units. In some implementations, the substrate device is integrally coupled to the substrate handler via a wireless communication link in order to communicate position information as feedback for further placement.

    PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER
    17.
    发明申请
    PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER 审中-公开
    过程状态感测装置和等离子体室的方法

    公开(公告)号：US20150020972A1

    公开(公告)日：2015-01-22

    申请号：US14505289

    申请日：2014-10-02

    Applicant: KLA-Tencor Corporation

    Inventor： Earl Jensen ,  Mei Sun

    IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67

    CPC classification number: H01J37/32954 ,  G01R19/0061 ,  H01J37/32 ,  H01J37/32917 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/34

    Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

    Abstract translation: 用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。 基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。 每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。 集电器部分包括与衬底的表面平齐的表面。 传感器电子器件嵌入基板并耦合到收集器部分。 当衬底表面暴露于等离子体时，可以用传感器测量由等离子体产生的一个或多个信号。

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