公开(公告)号：US10139352B2

公开(公告)日：2018-11-27

申请号：US14882370

申请日：2015-10-13

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Wei Lu ,  Andrei V. Shchegrov ,  Pablo Rovira ,  Jonathan M. Madsen

IPC: G01N21/93 ,  G01N21/956

Abstract: Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.

公开(公告)号：US08879073B2

公开(公告)日：2014-11-04

申请号：US13770202

申请日：2013-02-19

Applicant: KLA-Tencor Corporation

Inventor： Jonathan M. Madsen ,  Andrei V. Shchegrov ,  Michael Bakeman ,  Thaddeus Gerard Dziura ,  Alexander Kuznetsov ,  Bin-Ming (Benjamin) Tsai

IPC: G01B11/14 ,  G01B11/06 ,  G01N21/956

CPC classification number: G01N21/956 ,  G01B11/0625 ,  G01B11/0641 ,  G01B2210/56 ,  G03F7/70683 ,  H01L22/30

Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE.

Abstract translation: 提出了用于增强对感兴趣的特定参数的度量敏感性的方法和系统。 场增强元件（FEE）被构造为样本的一部分，以增强样品上存在的感兴趣结构的测量灵敏度。 FEE的设计考虑了测量目标和制造设计规则，使目标制造与整个设备制造过程相兼容。 通过添加FEE，增强不透明材料，高纵横比结构，低灵敏度结构或相互关联的参数的测量。 示例性测量包括临界尺寸，膜厚度，膜组成和光学散射测量覆盖。 在一些示例中，目标元素包括不同的FEE以改善感兴趣的不同结构的测量。 在其他示例中，不同的目标元素包括不同的FEE。 在一些其他示例中，场增强元件被成形为将电场集中在沉积在FEE上的薄膜中。

公开(公告)号：US20140316730A1

公开(公告)日：2014-10-23

申请号：US14252323

申请日：2014-04-14

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Stilian Ivanov Pandev ,  Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Ori Tadmor

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

Abstract translation: 提出了直接在器件结构上执行半导体测量的方法和系统。 基于从至少一个设备结构收集的测量训练数据创建测量模型。 训练后的测量模型用于直接从其他晶圆的器件结构收集的测量数据中计算过程参数值，结构参数值或两者。 在一些示例中，收集来自多个目标的测量数据用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。