公开(公告)号：US07618838B2

公开(公告)日：2009-11-17

申请号：US11410796

申请日：2006-04-25

Applicant: Igor A. Levitsky ,  William B. Euler ,  Natalya A. Tokranova ,  Bai Xu ,  James Castracane

Inventor： Igor A. Levitsky ,  William B. Euler ,  Natalya A. Tokranova ,  Bai Xu ,  James Castracane

IPC: H01L51/48 ,  H01L31/00

CPC classification number: H01L51/4213 ,  H01L51/0037 ,  H01L51/0078 ,  H01L51/4253 ,  Y02E10/549

Abstract: A method for forming a photovoltaic cell which includes forming a nanostructured layer in a semiconductor material having a plurality of pores opening onto a surface, the plurality of pores having a depth greater than about 1 micron and a diameter between about 5 nanometers and about 1,200 nanometers, and disposing an organic charge-transfer material in the pores of the nanostructured layer. A first electrode is attached to the semiconductor material, and a second electrode is attached to the organic charge-transfer material. The semiconductor material has a thickness between about 5 microns and about 700 microns. Desirably, the nanostructured layer has a porosity of less than the porosity corresponding to the percolation threshold, and the organic charge-transfer material extends at least about 100 nm from the surface of the nanostructured layer. The organic charge-transfer material may partially cover the sides of the pores of the nanostructured layer thereby providing a generally cylindrical cavity therein.

Abstract translation: 一种形成光伏电池的方法，包括在半导体材料中形成纳米结构层，所述半导体材料具有在表面上开口的多个孔，所述多个孔的深度大于约1微米，直径在约5纳米至约1,200纳米 并且在纳米结构层的孔中设置有机电荷转移材料。 第一电极附接到半导体材料，第二电极附着到有机电荷转移材料上。 半导体材料具有约5微米至约700微米的厚度。 期望地，纳米结构层具有小于对应于渗滤阈值的孔隙率的孔隙率，并且有机电荷转移材料从纳米结构层的表面延伸至少约100nm。 有机电荷转移材料可以部分地覆盖纳米结构层的孔的侧面，从而在其中提供大致圆柱形的空腔。

公开(公告)号：US07527997B2

公开(公告)日：2009-05-05

申请号：US11101861

申请日：2005-04-08

Applicant: Bai Xu ,  Natalya Tokranova ,  James Castracane

Inventor： Bai Xu ,  Natalya Tokranova ,  James Castracane

IPC: H01L21/00

CPC classification number: B81C3/001 ,  B81B2201/0292 ,  B81C2203/031

Abstract: A silicon-on-insulator (SOI) substrate is anodically bonded to a glass substrate in a MEMS structure with or without electrically bypassing the insulator layer by electrically comprising the silicon layers. The insulator layer serves as an etch stop to create a well-defined, thin silicon membrane for a sensor. A second glass substrate is anodically bonded to the other side of the SOI substrate, and debonding of the existing anodic bond prevented by eliminating any potential drop across the existing bonded surface.

Abstract translation: 绝缘体上硅（SOI）衬底在具有或不通过电耦合硅层电绝缘绝缘体层的MEMS结构中阳极结合到玻璃衬底。 绝缘体层用作蚀刻停止层以产生用于传感器的明确限定的薄硅膜。 第二玻璃基板阳极结合到SOI衬底的另一侧，并且通过消除现有接合表面上的任何电位下降阻止了现有阳极结合的剥离。

公开(公告)号：US06341526B1

公开(公告)日：2002-01-29

申请号：US09363984

申请日：1999-07-28

Applicant: James Castracane ,  Mikhail A. Gutin

Inventor： James Castracane ,  Mikhail A. Gutin

IPC: G01L900

CPC classification number: G01L9/0079

Abstract: An improved optical pressure sensor determines the pressure of the fluid to be monitored by the deflection of a diaphragm in the pressure chamber of the sensor which has an inlet from the measured vessel. The deflection of the diaphragm is determined by monitoring the interference of diode light reflected from the diaphragm and a silicon grating structure superimposed over the diaphragm, at critical positions. Intensity detectors are placed at critical positions such as the specific orders of the diffraction grating to measure the interference intensity of the reflected light. The interferometric accuracy with which the pressure measurement is made with the present invention far exceeds that obtained with optical pressure sensors described in the prior art.

Abstract translation: 改进的光学压力传感器通过具有来自测量容器的入口的传感器的压力室中的隔膜的偏转来确定待监测的流体的压力。 光阑的偏转是通过监测从光阑反射的二极管光的干涉和叠加在光阑上的硅光栅结构在关键位置的干扰而确定的。 强度检测器放置在关键位置，例如衍射光栅的特定顺序，以测量反射光的干涉强度。 用本发明进行压力测量的干涉测量精度远远超过现有技术中描述的光学压力传感器获得的干涉测量精度。

公开(公告)号：US06282213B1

公开(公告)日：2001-08-28

申请号：US09152428

申请日：1998-09-14

Applicant: Mikhail A. Gutin ,  James Castracane

Inventor： Mikhail A. Gutin ,  James Castracane

IPC: H01S310

CPC classification number: H01S5/141 ,  H01S3/105 ,  H01S5/143

Abstract: An improved tunable diode laser is capable of fast digital line selection over a broad wavelength spectrum, and uses no moving parts. A focusing element, such as a mirror or a lens, used in combination with a micromirror array serves as the retroreflector in a typical Littman-Metcalf laser cavity. This configuration provides arbitrary, simultaneous, and/or sequential line selection capability over a very broad wavelength range. The use of an individually-controllable micromirror array eliminates the high precision mechanical motion of a grating element and improves the overall durability and ruggedness of the device. The present invention can be integrated into any diode laser and has significant application in spectroscopy.

Abstract translation: 改进的可调谐二极管激光器能够在宽波长频谱上进行快速数字线选择，并且不使用移动部件。 与微镜阵列组合使用的诸如镜子或透镜的聚焦元件在典型的Littman-Metcalf激光腔中用作后向反射器。 该配置在非常宽的波长范围内提供任意的，同时的和/或顺序的线选择能力。 使用独立可控的微镜阵列消除了光栅元件的高精度机械运动，并提高了设备​​的整体耐久性和耐用性。 本发明可以集成到任何二极管激光器中，并且在光谱学中具有显着的应用。