公开(公告)号：US11860032B2

公开(公告)日：2024-01-02

申请号：US17384915

申请日：2021-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya Fujita ,  Yusei Tamura ,  Kenji Makino ,  Takashi Baba ,  Koei Yamamoto

IPC: H01L31/02 ,  G01J1/44 ,  H01L27/144 ,  H01L31/107

CPC classification number: G01J1/44 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/442 ,  G01J2001/4466

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US11508770B2

公开(公告)日：2022-11-22

申请号：US17053647

申请日：2019-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Takashi Baba ,  Masanori Okada ,  Terumasa Nagano

IPC: H01L27/146 ,  H04N5/359 ,  H01L31/107 ,  H04N5/351

Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

公开(公告)号：US20220231071A1

公开(公告)日：2022-07-21

申请号：US17714904

申请日：2022-04-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

公开(公告)号：US09773935B2

公开(公告)日：2017-09-26

申请号：US15002706

申请日：2016-01-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144 ,  G01T1/208 ,  H01L31/0224 ,  G01J1/42 ,  H01L49/02 ,  H01L31/02

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

公开(公告)号：US09768222B2

公开(公告)日：2017-09-19

申请号：US15150859

申请日：2016-05-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144

CPC classification number: H01L27/14643 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14658 ,  H01L31/107

Abstract: A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.

公开(公告)号：US12218170B2

公开(公告)日：2025-02-04

申请号：US17714904

申请日：2022-04-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/107

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

公开(公告)号：US11374043B2

公开(公告)日：2022-06-28

申请号：US16316652

申请日：2017-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

公开(公告)号：US11183608B2

公开(公告)日：2021-11-23

申请号：US16348187

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shigeyuki Nakamura ,  Shunsuke Adachi ,  Takashi Baba ,  Terumasa Nagano ,  Koei Yamamoto

IPC: H01L31/101 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0256 ,  H04N5/378

Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes. The number of signal processing units included on the mount substrate is more than the number of light receiving regions in each of the pixels.

公开(公告)号：US11125616B2

公开(公告)日：2021-09-21

申请号：US16963312

申请日：2019-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya Fujita ,  Yusei Tamura ,  Kenji Makino ,  Takashi Baba ,  Koei Yamamoto

IPC: H01L31/02 ,  G01J1/44 ,  H01L27/144 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US11322635B2

公开(公告)日：2022-05-03

申请号：US16346929

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takashi Baba ,  Shunsuke Adachi ,  Shigeyuki Nakamura ,  Terumasa Nagano ,  Koei Yamamoto

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/02 ,  G01J1/44

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.