公开(公告)号：US20140178598A1

公开(公告)日：2014-06-26

申请号：US13916404

申请日：2013-06-12

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Kwang Hyo CHUNG ,  Jin Tae KIM ,  Young-Jun YU ,  Jin Sik CHOI ,  Doo Hyeb YOUN ,  Ki-Chul KIM ,  Choon Gi CHOI

IPC: B05D7/24

CPC classification number: H05K3/1258 ,  H05K1/097 ,  H05K2201/0323 ,  H05K2201/09036 ,  H05K2203/095

Abstract: Disclosed are methods for forming a graphene pattern. The method includes forming a fine pattern defined by at least one trench on a substrate, applying a graphene solution on the fine pattern, and selectively forming a graphene layer on the fine pattern contacting the graphene solution.

Abstract translation: 公开了形成石墨烯图案的方法。 该方法包括形成由衬底上的至少一个沟槽限定的精细图案，在精细图案上施加石墨烯溶液，并且在与石墨烯溶液接触的精细图案上选择性地形成石墨烯层。