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    Doping of SiC structures and methods associated with same
    13.
    发明授权
    Doping of SiC structures and methods associated with same 有权
    掺杂SiC结构和与之相关的方法

    公开(公告)号：US07488984B2

    公开(公告)日：2009-02-10

    申请号：US11407853

    申请日：2006-04-19

    Applicant: Jeffrey M. Melzak ,  Chien-Hung Wu

    Inventor： Jeffrey M. Melzak ,  Chien-Hung Wu

    IPC: H01L29/15

    CPC classification number: B81C1/00666 ,  H01L21/3148 ,  H01L29/1608 ,  H01L29/84 ,  Y10S438/931

    Abstract: Doped silicon carbide structures, as well as methods associated with the same, are provided. The structures, for example, are components (e.g., layer, patterned structure) in MEMS structures. The doped silicon carbide structures may be highly conductive, thus, providing low resistance to electrical current. An in-situ doping process may be used to form the structures. The process parameters can be selected so that the structures have a low residual stress and/or low strain gradient. Thus, the structures may be formed having desired dimensions with little (or no) distortion arising from residual stress and/or strain gradient. The high conductivity and mechanical integrity of the structures are significant advantages in MEMS devices such as sensors and actuators.

    Abstract translation: 提供了掺杂的碳化硅结构，以及与其相关的方法。 该结构例如是MEMS结构中的部件（例如，层，图案化结构）。 掺杂的碳化硅结构可以是高导电性的，因此提供低电阻的电流。 可以使用原位掺杂工艺来形成结构。 可以选择工艺参数，使得结构具有低残余应力和/或低应变梯度。 因此，可以形成具有由残余应力和/或应变梯度引起的很少（或不）变形的期望尺寸的结构。 结构的高导电性和机械完整性在诸如传感器和致动器的MEMS装置中是显着的优点。

    Easy-to-tear safety adhesive tape
    14.
    发明授权
    Easy-to-tear safety adhesive tape 有权
    易撕撕裂安全胶带

    公开(公告)号：US06350517B1

    公开(公告)日：2002-02-26

    申请号：US09514343

    申请日：2000-02-28

    Applicant: Chien-Hung Wu

    Inventor： Chien-Hung Wu

    IPC: C09J702

    CPC classification number: B32B7/12 ,  C09J7/29 ,  C09J2201/162 ,  C09J2423/006 ,  C09J2427/006 ,  C09J2433/00 ,  C09J2433/006 ,  C09J2463/006 ,  C09J2467/006 ,  C09J2475/006 ,  C09J2483/005 ,  Y10T428/2839 ,  Y10T428/2848 ,  Y10T428/2891 ,  Y10T428/31786 ,  Y10T428/31797

    Abstract: A safety adhesive tape having a base layer, a hard resin layer, an adhesive layer, and an anti-sticking layer, the base layer being a plastic film, the hard resin layer being coated on the top side of the base layer, the adhesive layer being coated on the bottom side of the base layer for sticking, the anti-sticking layer being a stripping film covered on one side of the hard resin layer opposite to the base layer. The hard resin layer changes the structural property of the adhesive tape, enabling the adhesive tape to be easily pulled apart with the hands, or cut with a cutter.

    Abstract translation: 一种具有基层，硬树脂层，粘合剂层和防粘层的安全胶带，所述基层是塑料膜，所述硬树脂层涂覆在所述基层的顶侧，所述粘合剂 层被涂覆在基层的底面上用于粘贴，防粘层是在硬质树脂层的与基层相对的一侧上覆盖的剥离膜。 硬树脂层改变粘合带的结构性质，使得胶带可以容易地用手拉开或用切割器切割。

    Silicon carbide MEMS structures and methods of forming the same
    16.
    发明授权
    Silicon carbide MEMS structures and methods of forming the same 有权
    碳化硅MEMS结构及其形成方法相同

    公开(公告)号：US08154092B2

    公开(公告)日：2012-04-10

    申请号：US10914468

    申请日：2004-08-09

    Applicant: Jeffrey M. Melzak ,  Chien-Hung Wu

    Inventor： Jeffrey M. Melzak ,  Chien-Hung Wu

    IPC: H01L29/82

    CPC classification number: B81C1/00246 ,  B81C2203/0728

    Abstract: MEMS structures that include silicon carbide micromechanical components, as well as methods of forming and using the same, are provided. The silicon carbide micromechanical components may be integrated on the same structure with electronic components that control or detect movement of the micromechanical components. MEMS structures of the invention may be used in a variety of applications including microsensor and microactuator applications.

    Abstract translation: 提供了包括碳化硅微机械部件的MEMS结构以及其形成和使用方法。 碳化硅微机械部件可以集成在与控制或检测微机械部件的移动的电子部件相同的结构上。 本发明的MEMS结构可用于各种应用，包括微传感器和微致动器应用。

    THERMAL CONDUCTIVITY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    17.
    发明申请
    THERMAL CONDUCTIVITY SUBSTRATE AND MANUFACTURING METHOD THEREOF 审中-公开
    热导率基板及其制造方法

    公开(公告)号：US20120070684A1

    公开(公告)日：2012-03-22

    申请号：US13046785

    申请日：2011-03-14

    Applicant: Chin-Sheng Wang ,  Ching-Sheng Chen ,  Chien-Hung Wu

    Inventor： Chin-Sheng Wang ,  Ching-Sheng Chen ,  Chien-Hung Wu

    IPC: B32B15/04 ,  B32B38/00 ,  C25D5/16 ,  B32B37/00

    CPC classification number: C25D5/16 ,  B32B15/08 ,  B32B37/02 ,  B32B2307/302 ,  B32B2457/08 ,  C25D5/10 ,  H01L2924/0002 ,  H05K1/05 ,  H05K3/421 ,  H05K2201/0338 ,  Y10T428/12535 ,  H01L2924/00

    Abstract: A thermal conductivity substrate including a metal substrate, a metal layer, an insulating layer, a plurality of conductive structures, a first conductive layer and a second conductive layer is provided. The metal layer is disposed on the metal substrate and entirely covers the metal substrate. The insulating layer is disposed on the metal layer. The conductive structures are embedded in the insulating layer and connected to a portion of the metal layer. The first conductive layer is disposed on the insulating layer. The second conductive layer is disposed on the first conductive layer and the conductive structures. The second conductive layer is electrically connected to a portion of the metal layer through the conductive structures. The second conductive layer and the conductive structures are integrally formed.

    Abstract translation: 提供了包括金属基板，金属层，绝缘层，多个导电结构，第一导电层和第二导电层的导热性基板。 金属层设置在金属基板上，完全覆盖金属基板。 绝缘层设置在金属层上。 导电结构嵌入在绝缘层中并连接到金属层的一部分。 第一导电层设置在绝缘层上。 第二导电层设置在第一导电层和导电结构上。 第二导电层通过导电结构电连接到金属层的一部分。 第二导电层和导电结构整体形成。

    FLASH MEMORY DEVICE WITH RECTIFIABLE REDUNDANCY BIT AND METHOD OF CONTROLLING THE SAME
    18.
    发明申请
    FLASH MEMORY DEVICE WITH RECTIFIABLE REDUNDANCY BIT AND METHOD OF CONTROLLING THE SAME 审中-公开
    具有可完成冗余位的闪存存储器件及其控制方法

    公开(公告)号：US20100287448A1

    公开(公告)日：2010-11-11

    申请号：US12761526

    申请日：2010-04-16

    Applicant: Jen-Yu HSU ,  Chien-Hung Wu

    Inventor： Jen-Yu HSU ,  Chien-Hung Wu

    IPC: H03M13/05 ,  G06F11/10

    CPC classification number: G06F11/1072 ,  G11C2029/0411

    Abstract: A flash memory device connected to a host includes: a flash memory; and a control circuit comprising a first error correcting code unit and a second error correcting code unit. The data length of a redundancy bit generated by the second error correcting code unit is longer than the data length of a redundancy bit generated by the first error correcting code unit. The first error correcting code unit is adopted to process with a data transmitted to the flash memory from the host when a damage risk of the flash memory is lower than a specific value; and the second error correcting code unit is adopted to process with the data transmitted to the flash memory from the host when the damage risk of the flash memory is higher than the specific value.

    Abstract translation: 连接到主机的闪存设备包括：闪存; 以及包括第一纠错码单元和第二纠错码单元的控制电路。 由第二纠错码单元生成的冗余位的数据长度比由第一纠错码单元生成的冗余位的数据长度长。 当闪存的损坏风险低于特定值时，采用第一纠错码单元处理从主机发送到闪速存储器的数据; 并且当闪存的损坏风险高于特定值时，采用第二纠错码单元处理从主机发送到闪存的数据。

    System and method for detecting and reducing data corruption in a storage device
    19.
    发明授权
    System and method for detecting and reducing data corruption in a storage device 有权
    用于检测和减少存储设备中的数据损坏的系统和方法

    公开(公告)号：US07743277B2

    公开(公告)日：2010-06-22

    申请号：US11352654

    申请日：2006-02-13

    Applicant: Hooshmand Torabi ,  Chien-Hung Wu

    Inventor： Hooshmand Torabi ,  Chien-Hung Wu

    IPC: G06F11/00

    CPC classification number: G11C16/3418 ,  G11C16/102 ,  G11C16/3422

    Abstract: A data storage system using flash storage maintains a status indicator corresponding to data written into the flash storage. The status indictor of the data indicates whether a disruption, such as a power disruption or a device disconnection, occurred when the data was being written into the flash storage. The data storage system determines whether the data may be corrupted based on one or more of the status indictors. The data storage system may make this determination at a selected time or after a power-up of the data storage system. If the data is determined to possibly be corrupted, the data storage system may optionally discard the corrupted data from the flash storage or flag the corrupted data for future removal.

    Abstract translation: 使用闪存存储的数据存储系统保持与写入闪存存储器的数据相对应的状态指示符。 数据的状态指示器指示当数据被写入闪存存储器时是否发生中断，例如电源中断或设备断开连接。 数据存储系统基于一个或多个状态指示来确定数据是否可能被破坏。 数据存储系统可以在选定的时间或在数据存储系统上电之后进行该确定。 如果数据被确定为可能被破坏，则数据存储系统可以可选地从闪存存储器中丢弃已损坏的数据，或者标记被破坏的数据以供将来去除。

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