公开(公告)号：US09787931B2

公开(公告)日：2017-10-10

申请号：US15239530

申请日：2016-08-17

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa ,  Fumihiro Inui

IPC: H01L27/148 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

公开(公告)号：US09577003B2

公开(公告)日：2017-02-21

申请号：US14681921

申请日：2015-04-08

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa ,  Masahiro Kobayashi

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.

Abstract translation: 固体摄像装置包括其中布置有光电转换单元的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与各个光电转换单元相关联的孔。 会员排列在相应的孔中。 遮光构件设置在与半导体基板的一个构件的相对侧上，使得只有相关联的光电转换单元被遮光。 在固态图像拾取装置中，同时形成孔并且同时形成构件。

公开(公告)号：US09419030B2

公开(公告)日：2016-08-16

申请号：US14856354

申请日：2015-09-16

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa

IPC: H01L27/00 ,  H01L27/146 ,  H01L31/09

CPC classification number: H01L27/14636 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/09

Abstract: A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

公开(公告)号：US09391112B2

公开(公告)日：2016-07-12

申请号：US14038516

申请日：2013-09-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa

IPC: H01L21/768 ,  H01L27/146 ,  H01L23/00 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L25/0657 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.

Abstract translation: 半导体装置包括穿透第一半导体层的导电构件，第一绝缘体层和第三绝缘体层，并且将第一导体层与第二导体层连接。 导电构件具有包含铜的第一区域，并且包含不同于铜的材料的第二区域至少位于第一区域和第一半导体层之间，位于第一区域和第一绝缘体层之间，并且位于第一区域 和第三绝缘体层。 铜对材料的扩散系数低于铜对第一半导体层的扩散系数和铜向第一绝缘体层的扩散系数。

公开(公告)号：US20160126285A1

公开(公告)日：2016-05-05

申请号：US14992234

申请日：2016-01-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masahiro Kobayashi ,  Mineo Shimotsusa

IPC: H01L27/146 ,  H01L27/02

CPC classification number: H01L27/14689 ,  H01L27/0255 ,  H01L27/0296 ,  H01L27/146 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/288

Abstract: A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.

公开(公告)号：US09324744B2

公开(公告)日：2016-04-26

申请号：US13770307

申请日：2013-02-19

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14601 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14636 ,  H01L31/18 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A solid-state image sensor includes a semiconductor layer, a multilayer wiring layer, an opening which extends through the semiconductor layer, and reaches an electrically conductive layer in the multilayer wiring layer, an electrically conductive member arranged in the opening so as to be connected to the electrically conductive layer, and a trench which surrounds the opening, and extends through the semiconductor layer, the trench having a space with no solid substance, and the semiconductor layer including a wall portion arranged between a side face defining the opening, and an inner-side face defining the trench to surround the electrically conductive member.

Abstract translation: 固态图像传感器包括半导体层，多层布线层，延伸穿过半导体层的开口，并到达多层布线层中的导电层;布置在开口中以连接的导电构件 导电层，以及围绕开口并延伸穿过半导体层的沟槽，沟槽具有不具有固体物质的空间，并且该半导体层包括布置在限定开口的侧面之间的壁部分和 内侧面限定沟槽以包围导电构件。

公开(公告)号：US09231019B2

公开(公告)日：2016-01-05

申请号：US14099449

申请日：2013-12-06

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14698 ,  H04N5/378

Abstract: A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.

Abstract translation: 一种制造固态图像传感器的方法，包括在具有第一和第二表面的半导体层中形成第一导电类型的第一隔离区域，形成第一隔离区域，该第一隔离区域包括第一注入，用于通过 在所述半导体层中形成第二导电类型的电荷蓄积区，在所述第一退火之后进行第一退火，在所述半导体层的所述第一表面侧形成互连，以及形成所述第一导电性的第二隔离区 形成第二隔离区域，该第二隔离区域包括用于通过第二表面将离子注入半导体层的第二注入。 第一和第二隔离区域布置在相邻的电荷累积区域之间。

公开(公告)号：US20150364517A1

公开(公告)日：2015-12-17

申请号：US14722681

申请日：2015-05-27

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Onuki ,  Masatsugu Itahashi ,  Nobuaki Kakinuma ,  Mineo Shimotsusa ,  Masato Fujita ,  Takumi Ogino ,  Keita Torii

IPC: H01L27/146 ,  H01L21/78

CPC classification number: H01L27/14689 ,  H01L21/78 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14687

Abstract: A method of manufacturing a solid-state image sensor including preparing a wafer including a pixel region where a photoelectric conversion element is provided, a peripheral circuit region where a gate electrode of a peripheral MOS transistor for constituting a peripheral circuit is provided, and a scribe region. The method includes forming an insulating film covering the pixel region, the peripheral circuit region, and the scribe region, and forming a sidewall spacer on a side surface of the gate electrode by etching the insulating film so that portions of the insulating film remains to cover the pixel region and the scribe region, and forming a metal silicide layer in the peripheral circuit region by using, as a mask for protection from silicidation, the insulating film covering the pixel region and the scribe region.

Abstract translation: 包括制备包括设置有光电转换元件的像素区域的晶片的固态图像传感器的制造方法，设置用于构成外围电路的外围MOS晶体管的栅电极的外围电路区域和划线 地区。 该方法包括：形成覆盖像素区域，外围电路区域和划线区域的绝缘膜，并且通过蚀刻绝缘膜在栅电极的侧表面上形成侧壁间隔物，使得绝缘膜的一部分保持覆盖 像素区域和划线区域，并且通过使用覆盖像素区域和划线区域的绝缘膜作为防止硅化的掩模，在外围电路区域中形成金属硅化物层。

公开(公告)号：US20230088227A1

公开(公告)日：2023-03-23

申请号：US17932220

申请日：2022-09-14

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa

IPC: B41J2/045

Abstract: A liquid ejection head including a base substrate, an ejection port to eject a liquid, a heating element formed above the base substrate that heats the liquid to eject the liquid from the ejection port, a temperature detection element formed above the base substrate that detects a temperature of the liquid, a wiring layer connected to the heating element, a protective layer formed on the base substrate that protects the heating element and the wiring layer from the liquid, and a liquid supply port that penetrates the base substrate and supplies the liquid to the ejection port. When viewed in a direction perpendicular to the base substrate, the temperature detection element is disposed between the heating element and the liquid supply port, and the temperature detection element is formed on the protective layer.

公开(公告)号：US20210368120A1

公开(公告)日：2021-11-25

申请号：US17393078

申请日：2021-08-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Mineo Shimotsusa ,  Fumihiro Inui

IPC: H04N5/378 ,  H01L27/146

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.