Integrated semiconductor device comprising a chemoresistive gas
microsensor and manufacturing process thereof
    11.
    发明授权
    Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 失效
    一种集成半导体器件,包括化学耐化学气体微传感器及其制造方法

    公开(公告)号:US6051854A

    公开(公告)日:2000-04-18

    申请号:US89816

    申请日:1998-06-03

    IPC分类号: G01N27/12 H01L23/58

    CPC分类号: G01N27/12

    摘要: An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.

    摘要翻译: 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径,用于由加热器元件产生的热量,从而在器件的操作期间向基板分散的热量可忽略。

    Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections
    12.
    发明授权
    Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections 有权
    用于制造包括微结构和相关联的悬挂电互连的集成器件的工艺

    公开(公告)号:US06469330B1

    公开(公告)日:2002-10-22

    申请号:US09422049

    申请日:1999-10-20

    IPC分类号: H01L2720

    摘要: An integrated device comprises an epitaxial layer forming a first and a second region separated by at least one air gap. The first region forms, for example, a suspended mass of an accelerometer. A bridge element extends on the air gap and has a suspended electrical connection line electrically connecting the first and the second region and a protective structure of etch-resistant material, which surrounds the electrical connection line on all sides. The protective structure is formed by a lower portion of silicon nitride and an upper portion of silicon carbide, the silicon carbide surrounding the electrical connection line at the upper and lateral sides.

    摘要翻译: 集成器件包括形成由至少一个气隙隔开的第一和第二区域的外延层。 第一区域形成例如加速度计的悬挂质量。 桥接元件在气隙上延伸并且具有电连接第一和第二区域的悬挂电连接线以及围绕所有侧面的电连接线的耐蚀刻材料的保护结构。 保护结构由氮化硅的下部和碳化硅的上部形成,碳化硅在上侧和外侧围绕电连接线。

    Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
    13.
    发明授权
    Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 有权
    一种集成半导体器件,包括化学耐化学气体微传感器及其制造方法

    公开(公告)号:US06248609B1

    公开(公告)日:2001-06-19

    申请号:US09506414

    申请日:2000-02-17

    IPC分类号: H01L2100

    CPC分类号: G01N27/12

    摘要: An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.

    摘要翻译: 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径,用于由加热器元件产生的热量,从而在器件的操作期间向基板分散的热量可忽略。

    Acceleration sensor and a method for its manufacture
    14.
    发明授权
    Acceleration sensor and a method for its manufacture 失效
    加速度传感器及其制造方法

    公开(公告)号:US6003374A

    公开(公告)日:1999-12-21

    申请号:US925599

    申请日:1997-09-08

    CPC分类号: G01P15/11

    摘要: An acceleration sensor is described which is formed by planar technology on a substrate. It includes a core of ferromagnetic material and, coupled conductively together by the core, a first winding adapted to be connected to a power supply and a second winding adapted to be connected to circuit means for measuring an electrical magnitude induced therein. The core has two suspended portions which are free to bend as a result of an inertial force due to an accelerative movement of the sensor itself. The bending causes lengthening of the core and hence a variation in the reluctance of the magnetic circuit. If a constant current is supplied to the first winding, a voltage is induced in the second winding as a result of the variation in the magnetic flux caused by the variation in reluctance.

    摘要翻译: 描述了通过在基板上的平面技术形成的加速度传感器。 它包括一个铁磁材料的核心,并且通过芯体导电地耦合在一起,适于连接到电源的第一绕组和适于连接到电路装置的第二绕组,该电路装置用于测量在其中感应的电气量。 芯具有由于传感器本身的加速运动而由于惯性力而自由弯曲的两个悬挂部分。 弯曲导致芯的延长,从而导致磁路的磁阻变化。 如果向第一绕组提供恒定电流,则由于磁阻变化引起的磁通量的变化,在第二绕组中产生电压。

    Electrostatic micromotor with stator and rotor in contact, in particular for probe-storage systems
    15.
    发明授权
    Electrostatic micromotor with stator and rotor in contact, in particular for probe-storage systems 有权
    静电微电机与定子和转子接触,特别是探针存储系统

    公开(公告)号:US08466599B2

    公开(公告)日:2013-06-18

    申请号:US12533850

    申请日:2009-07-31

    IPC分类号: H02N1/00

    CPC分类号: H02N1/004

    摘要: In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.

    摘要翻译: 在静电微电机中,移动基板面向固定的基板并且在操作的静止状态下以给定的分离距离悬挂在固定的基板上; 致动单元被构造成在致动的操作状态期间在移动方向上相对于固定基板产生相对移动。 致动单元还构造成使得移动基板和固定基板在操作的操作状态下基本接触并保持它们接触。 静电微电机设置有用于减少摩擦的电子单元,其被配置为在相对运动期间减小由转子基板和定子基板之间的接触产生的摩擦。

    ELECTROSTATIC MICROMOTOR WITH STATOR AND ROTOR IN CONTACT, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS
    16.
    发明申请
    ELECTROSTATIC MICROMOTOR WITH STATOR AND ROTOR IN CONTACT, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS 有权
    具有定子和转子接触的静电微型电动机,特别是探针存储系统

    公开(公告)号:US20100026138A1

    公开(公告)日:2010-02-04

    申请号:US12533850

    申请日:2009-07-31

    IPC分类号: H02N11/00

    CPC分类号: H02N1/004

    摘要: In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.

    摘要翻译: 在静电微电机中,移动基板面向固定的基板并且在操作的静止状态下以给定的分离距离悬挂在固定的基板上; 致动单元被构造成在致动的操作状态期间在移动方向上相对于固定基板产生相对移动。 致动单元还构造成使得移动基板和固定基板在操作的操作状态下基本接触并保持它们接触。 静电微电机设置有用于减少摩擦的电子单元,其被配置为在相对运动期间减小由转子基板和定子基板之间的接触产生的摩擦。

    SILICON ELECTROSTATIC MICROMOTOR WITH INDENTATIONS, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS
    17.
    发明申请
    SILICON ELECTROSTATIC MICROMOTOR WITH INDENTATIONS, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS 有权
    具有指示性,特别是探针存储系统的硅电极微型电机

    公开(公告)号:US20100026137A1

    公开(公告)日:2010-02-04

    申请号:US12533835

    申请日:2009-07-31

    IPC分类号: H02N11/00

    CPC分类号: H02N1/004

    摘要: In an electrostatic micromotor, a mobile substrate faces a fixed substrate, and electrostatic-interaction elements are provided to allow a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement. The electrostatic-interaction elements include electrodes arranged on a facing surface of the fixed substrate (2) facing the mobile substrate. The mobile substrate has indentations, which extend within the mobile substrate starting from a respective facing surface that faces the fixed substrate and define between them projections staggered with respect to the electrodes in the direction of movement. Side walls of the indentations have a first distance of separation at the respective facing surface, and a second distance of separation, greater than the first distance of separation, at an internal region of the indentations.

    摘要翻译: 在静电微电机中,移动衬底面向固定衬底,并且提供静电相互作用元件以允许移动衬底相对于固定衬底在移动方向上的相对移动。 静电相互作用元件包括布置在面向移动基板的固定基板(2)的面对表面上的电极。 移动基板具有凹槽,其从移动基板的相对面朝向固定基板开始并且在它们之间限定在移动方向上相对于电极交错的凸起之间延伸的移动基板。 凹陷的侧壁在相应的相对表面处具有第一分离距离,并且在凹陷的内部区域处具有大于分离距离的第二距离。

    Wafer of semiconductor material for fabricating integrated devices, and
process for its fabrication
    18.
    发明授权
    Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication 失效
    用于制造集成器件的半导体材料的晶片及其制造工艺

    公开(公告)号:US5855693A

    公开(公告)日:1999-01-05

    申请号:US571806

    申请日:1995-12-13

    摘要: A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.

    摘要翻译: 一种用于制造集成器件的半导体材料晶片,包括由包括由碳化硅,氮化硅和陶瓷材料组成的材料制成的中间绝缘层分隔的第一和第二单晶硅层的叠加层。 在中间层和第二硅层之间设置氧化物接合层。 通过在加热的真空室中在第一硅层上形成中间绝缘层来制造晶片; 沉积氧化层; 并叠加第二硅层。 当硅,绝缘材料,氧化物和硅层的堆叠被热处理时,氧化物反应以将绝缘层粘合到第二硅层。 作为陶瓷材料氧化铍,可以使用氮化铝,氮化硼和氧化铝。

    Micro-actuator for hard drive utilizing insulating portions to separate biasing regions from adjacent regions of the micro-actuator and simplified manufacture process therefore
    19.
    发明授权
    Micro-actuator for hard drive utilizing insulating portions to separate biasing regions from adjacent regions of the micro-actuator and simplified manufacture process therefore 有权
    用于硬盘驱动器的微致动器利用绝缘部分从而将偏压区域与微致动器的相邻区域分开并因此简化了制造过程

    公开(公告)号:US07463454B2

    公开(公告)日:2008-12-09

    申请号:US11818659

    申请日:2007-06-14

    IPC分类号: G11B5/56

    CPC分类号: B81B3/0021 H02N1/006

    摘要: A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

    摘要翻译: 由具有厚度并限定可移动部分和固定部分的半导体材料体形成的微电子机械装置。 可移动部分由移动平台,从移动平台延伸到固定部分的支撑臂,以及固定到移动平台的移动电极形成。 固定部分具有面向移动电极的固定电极,固定到固定电极的第一偏置区域,固定到支撑臂的第二偏压区域以及延伸穿过主体整个厚度的绝缘材料的绝缘区域。 绝缘区域在第一和第二偏压区域之间至少一个与固定部件的其余部分绝缘。

    Process for manufacturing a micromachined oscillating element, in particular a mirror for optical switches
    20.
    发明授权
    Process for manufacturing a micromachined oscillating element, in particular a mirror for optical switches 有权
    用于制造微机械振荡元件的方法,特别是用于光学开关的反射镜

    公开(公告)号:US07208339B2

    公开(公告)日:2007-04-24

    申请号:US11063483

    申请日:2005-02-22

    IPC分类号: H01L21/00

    CPC分类号: G02B27/0994

    摘要: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

    摘要翻译: 由半导体材料制成的微机械加工装置由半导体本体形成, 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定,在顶部由衬底限定,并且在底部由半导体本体限定。 底部固定区域形成固定电极,其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中,并且通过沟槽与顶部固定区域分离,其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此,固定电极和移动电极在平面图中梳理,但形成在不同的水平上。