Abstract:
Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
Abstract:
Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
Abstract:
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
Abstract:
During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
Abstract:
A low noise filter is arranged to receive an input signal from a downconverter. The low noise filter is constructed to block or cancel any DC offset in the input signal, as well as filter selected frequency components from the input signal. The low noise filter uses a shared capacitor both to handle the DC offset and to set filter response characteristics. As the low noise filter is implemented with a Frequency Dependent Negative Resistance (FDNR) device, the shared capacitor may be relatively small. The low noise filter has a load capacitor, with the output of the load capacitor coupled to a bias resistor and voltage. This bias structure cooperates with the load capacitor to set a high cutoff frequency for the low noise filter useful for blocking or canceling the DC offset.
Abstract:
The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
Abstract:
The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
Abstract:
A receiver for a multi-mode wireless device is provided. The receiver has multiple analog RF front end modules, with each module supporting a different mode of operation. The receiver has a single digital backend module for generating a digital baseband signal. A controller selects one of the available RF modules to use, and the selected RF module provides an analog communication signal to the digital backend. Each available mode has an associated set of factors. When a particular mode is selected, the set of factors associated with the selected mode is provided to the digital backend. The digital backend uses these factors to adjust the processing characteristics of its components, such as its analog to digital converter, filters, and gain controller. In this way, the single digital backend is adaptable to the requirements of each of the available radio modes.
Abstract:
During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.