Abstract:
The present disclosure relates to a pixel circuit, a driving method thereof and related devices. The pixel circuit comprises: a reset compensation module, a data writing module, a storage module and a driving transistor. With the cooperation of each module, the pixel circuit can compensate shift of a threshold voltage for a driving transistor by storing the threshold voltage for the driving transistor in the storage module. Therefore, when the source of the driving transistor in the pixel circuit is connected with a light emitting device for driving it to emit light for display, the driving current of the driving transistor for driving the light emitting device to emit light will be only associated with the voltage of the data signal, but not the threshold voltage for the driving transistor. In this way, influence of the threshold voltage of the driving transistor on the light emitting device will be avoided.
Abstract:
A judging method of array test reliability, comprising steps: S1, taking at least one of organic light emitting backplanes subjected to an array test as a sample substrate; S2, performing a scan on pixel units of the sample substrate row by row and providing a data voltage signal; S3, detecting a current that is output to an anode of each pixel unit from a pixel circuit layer; S4, comparing the current that is output to the anode of each pixel unit from the pixel circuit layer with a predefined current, judging that the pixel unit is a defective pixel unit when the two are inconsistent; S5, comparing a judgment result of each pixel unit with a test result of the array test, judging that the array test is reliable when the two are consistent, judging that the array test is unreliable when the two are inconsistent.
Abstract:
An embodiment of the disclosed technology provides a driving device for a thin film transistor liquid crystal display (TFT-LCD) and a method for manufacturing the same. The driving device comprises at least one first TFT and at least one second TFT formed a base substrate, wherein load of the first TFT is larger than load of the second TFT, the first TFT is of a top-gate configuration, and the second TFT is of a bottom-gate configuration.
Abstract:
There are provided a shift register unit, a gate driving circuit and a display device, which enable gate lines in non-output rows to remain in the state of no signal outputting. The shift register unit comprises an input module (10), a pull-up module (20), a pull-down control module (30), a first pull-down module (31), a second pull-down module (40) and a reset module (50). In the non-output time, the first pull-down module and the second pull-down module pull down the output voltages of the pull-up modules connected thereto to a low level alternately, thereby enabling gate lines in non-output rows to remain in the state of no signal outputting.
Abstract:
The embodiments of the invention provide a wiring structure, an array substrate and manufacturing method thereof, and a display panel, relate to the field of display technology, and can reduce the resistance of the wiring structure while reducing the wire width of the wiring structure. The wiring structure includes a first metal wire and a second metal wire disposed in a stack; wherein the first metal wire and the second metal wire are in direct contact.
Abstract:
The present disclosure provides a shift register unit, a gate driving circuit and a display apparatus. The shift register unit comprises: a first latch module having a first input terminal connected to a first clock signal terminal or a second clock signal terminal, a second input terminal for receiving a pulse signal, and an output terminal; and a second latch module having a first input terminal connected to the first clock signal terminal or the second clock signal terminal, a second input terminal connected to the output terminal of the first latch module, and an output terminal connected to a signal output terminal of the shift register unit. The first input terminal of the first latch module and the first input terminal of the second latch module are connected to the same signal terminal.
Abstract:
A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process. Consequently, the process number for manufacture of the thin film transistor is decreased, and the manufacturing cost is saved.
Abstract:
There are provided a pixel circuit and a driving method thereof, and a display apparatus. The pixel circuit comprises: a first transistor (T1), a second transistor (T2), a third transistor (T3), a storage capacitor (C1) and a light emitting device (L). A gate of the first transistor (T1) is connected to a first control signal terminal (S1), and a first electrode thereof is connected to a data signal terminal (DATA); a gate of the second transistor (T2) is connected to a second electrode of the first transistor (T1), a first electrode thereof is connected to a second electrode of the third transistor (T3), and a second electrode thereof is connected to a first terminal of the light emitting device (L); a gate of the third transistor (3) is connected to a second control signal terminal (S2), and a first electrode thereof is connected to a first power supply signal terminal (ELVDD); one terminal of the storage capacitor (C1) is connected to the gate of the second transistor (T2), and the other terminal thereof is connected to the second electrode of the second transistor (T2); one terminal of a parasitic capacitor (C2) formed by the light emitting device is connected to the first terminal of the light emitting device (L), and the other terminal thereof is connected to a second terminal of the light emitting device (L); and the second terminal of the light emitting device (L) is further connected to a second power supply signal terminal (ELVSS). The pixel circuit can compensate for the threshold voltage drift of TFT effectively and rise display effect.