公开(公告)号：US20220122883A1

公开(公告)日：2022-04-21

申请号：US17072135

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Sony Varghese ,  M. Arif Zeeshan ,  Shantanu Kallakuri ,  Kelvin Chan

IPC: H01L21/768

Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include a method may include providing a semiconductor device including plurality of patterning structures over a device stack, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface. The method may further include forming a seed layer along just the first sidewall and the upper surface of each of the plurality of patterning structures, forming a metal layer atop the seed layer, forming a fill material between each of the plurality of patterning structures, and removing the plurality of patterning structures.

公开(公告)号：US20220119938A1

公开(公告)日：2022-04-21

申请号：US17072143

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Tristan Y. Ma ,  Kelvin Chan

IPC: C23C16/02 ,  C23C16/505 ,  H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  H01L21/288 ,  H01L27/108

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.

公开(公告)号：US20220068923A1

公开(公告)日：2022-03-03

申请号：US17011729

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese

IPC: H01L27/105 ,  C23C16/04 ,  C23C16/02

Abstract: In one embodiment, a method of selectively forming a deposit may include
providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.