Abstract:
A magnetic field sensor includes an analog front end having first and second magnetic field sensing elements arranged at approximately 90-degrees with respect to each other, a pre-processor and an arctangent processor. The first and second magnetic field sensing elements are arranged in a sideshaft orientation with respect to a rotating object and offset with respect to an axis of rotation of the rotating object, the rotating object having a radial axis and a tangential axis. The pre-processor is configured to receive the first and second magnetic field signals from the analog front end and to apply a correction factor to one or both of the first and second magnetic field signals to produce first and second scaled magnetic field signals. The arctangent processor is configured to calculate an arctangent value of the first and second scaled magnetic field signals.
Abstract:
A magnetic field sensor that detects an angle of a target includes a first channel having first and second magnetic field sensing elements that are orthogonal with respect to each other and produce first and second magnetic field signals, and a second channel having third and fourth magnetic field sensing elements that are orthogonal with respect to each other and produce third and fourth magnetic field signals. The third sensing element is positioned at an angle (e.g., 45-degrees) with respect to the first sensing element. The magnetic field sensor includes a low power mode circuit that uses comparators to compare the first, second, third, and fourth magnetic field signals to a first, second, third, and fourth threshold, respectively. A processor is configured to use an output of the low power mode circuit to determine the angle of the target.
Abstract:
A sensor integrated circuit includes at least two processing channels responsive to the same or different analog input signals to generate respective processed signals. The two processing channels are non-homogenous and, in some embodiments have different processing accuracies. A checker circuit receives the first and second processed signals and is configured to detect a fault in the sensor integrated circuit when the first and second processed signals differ from each other by more than a predetermined amount.
Abstract:
The present disclosure is directed to an electronic circuit having a Hall effect element and a resistor bridge, all disposed over a common semiconductor substrate. The resistor bridge includes a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series, and a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series. The first set of resistive elements and the second set of resistive elements can be coupled in parallel. The resistor bridge can be configured to sense a stress value of the Hall effect element.
Abstract:
The systems and methods described can reduce high order temperature coefficients on the Hall plate sensitivity. A temperature coefficient circuit may include a first amplifier to receive a first reference voltage generated in conjunction with a proportional to absolute temperature (PTAT) device and a second amplifier to receive a second reference voltage generated in conjunction with a complementary to absolute temperature (CTAT) device, the second amplifier having a second output node. A plurality of resistors may be disposed in a signal path between output node of the first amplifier and an output node of the second amplifier. The plurality of resistors may be coupled to at least one voltage-to-current converter through one or more resistors taps. The voltage-to-current converter may generate at least one current signal that can be operable to apply a multiplication factor or a division divisor to an amplifier coupled to the voltage-to-current converter.
Abstract:
An electronic circuit can be disposed upon a semiconductor substrate. An epitaxial layer can be disposed over the semiconductor substrate. The electronic circuit can include a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer. The electronic circuit can further include a current generator configured to generate a drive current that passes through the Hall effect element. The current generator can include a resistor disposed in the epitaxial layer and having characteristics such that a resistance of the resistor can vary with a stress of the semiconductor substrate, resulting in changes of the drive current, to compensate for variations in the sensitivity of the Hall effect element with the stress of the substrate.
Abstract:
A magnetic field sensor and a method include a modulator coupled in a feedback arrangement and operable to modulate a calibration feedback signal with a modulator clock signal having a selected frequency and a selected relative phase operable to remove a gain error in the magnetic field sensor and in the method.
Abstract:
Apparatus includes an ADC configured to convert an analog signal to a digital signal, a comparator having a first input responsive to the analog signal, a second input responsive to the digital signal, and an output at which a comparison signal is provided, and an output checker configured to process the comparison signal to generate a fault signal indicative of whether a fault has occurred in the ADC. The comparator can be an analog comparator in which case the digital signal is converted to an analog signal for the comparison or a digital comparator in which case an additional ADC is provided to convert the analog signal into a digital signal for the comparison. Embodiments include more than one ADC in which case summation elements are provided to sum the analog signals and the digital signals for the comparison.
Abstract:
A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).
Abstract:
A magnetic field sensor that detects an angle of a target includes a first channel having first and second magnetic field sensing elements that are orthogonal with respect to each other and produce first and second magnetic field signals, and a second channel having third and fourth magnetic field sensing elements that are orthogonal with respect to each other and produce third and fourth magnetic field signals. The third sensing element is positioned at an angle (e.g., 45-degrees) with respect to the first sensing element. The magnetic field sensor includes a low power mode circuit that uses comparators to compare the first, second, third, and fourth magnetic field signals to a first, second, third, and fourth threshold, respectively. A processor is configured to use an output of the low power mode circuit to determine the angle of the target.