-
公开(公告)号:US11156928B2
公开(公告)日:2021-10-26
申请号:US16615882
申请日:2018-05-02
Applicant: ASML Holding N.V.
Inventor: Gerrit Johannes Nijmeijer , Junqiang Zhou , Piotr Jan Meyer , Jeffrey John Lombardo , Igor Matheus Petronella Aarts
IPC: G03F9/00
Abstract: An alignment mark for determining a two-dimensional alignment position of a substrate is discussed. The alignment mark includes an array of patterns. The array of patterns includes a first set of patterns and a second set of patterns arranged. The first set of patterns is arranged in a first sequence along a first direction. The second set of patterns is arranged in a second sequence along the first direction. The second sequence is different from the first sequence. Each pattern of the array of patterns is different from other patterns of the array of patterns that are adjacent to the each pattern.
-
公开(公告)号:US10928738B2
公开(公告)日:2021-02-23
申请号:US16313687
申请日:2017-06-26
Applicant: ASML Holding N.V.
Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.
-