公开(公告)号：US10134585B2

公开(公告)日：2018-11-20

申请号：US14830131

申请日：2015-08-19

Applicant: The Regents of the University of California ,  GLOBALFOUNDRIES, Inc. ,  Applied Materials, Inc.

Inventor： Kasra Sardashti ,  Tobin Kaufman-Osborn ,  Tyler Kent ,  Andrew Kummel ,  Shariq Siddiqui ,  Bhagawan Sahu ,  Adam Brand ,  Naomi Yoshida

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/306 ,  H01L29/94

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

公开(公告)号：US10109534B2

公开(公告)日：2018-10-23

申请号：US14627861

申请日：2015-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Adam Brand ,  Naomi Yoshida ,  Seshadri Ganguli ,  David Thompson ,  Mei Chang

IPC: H01L21/3205 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the first work function layer and the second feature.