公开(公告)号：US20090004764A1

公开(公告)日：2009-01-01

申请号：US12213510

申请日：2008-06-20

申请人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

发明人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

IPC分类号： H01L21/782 ,  H01L33/00 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a single-crystal semiconductor layer which is suitable for practical use even when a substrate of which heat-resistant temperature is low, such as a glass substrate, is used, and to manufacture a highly reliable semiconductor device using such an SOI substrate. A semiconductor layer, which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface, is heated by supplying high energy by using at least one kind of particles having the high energy, and polishing treatment is performed on the heated surface of the semiconductor layer. At least part of a region of the semiconductor layer can be melted by the heat treatment by supplying high energy to reduce crystal defects in the semiconductor layer. Further, the surface of the semiconductor layer can be polished and planarized by the polishing treatment.

摘要翻译： 为了提供一种制造具有单晶半导体层的SOI衬底的方法，即使使用诸如玻璃衬底的耐热温度低的衬底也适用于实际使用，并且制造高度 使用这种SOI衬底的可靠的半导体器件。 通过使用至少一种具有高能量的颗粒提供高能量来加热与半导体衬底分离并结合到具有绝缘表面的支撑衬底的半导体层，并且对被加热表面进行抛光处理 的半导体层。 半导体层的区域的至少一部分可以通过提供高能量的热处理而熔化，以减少半导体层中的晶体缺陷。 此外，可以通过抛光处理对半导体层的表面进行抛光和平坦化。