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    WASHING METHOD AND WASHING MACHINE
    11.
    发明申请
    WASHING METHOD AND WASHING MACHINE 有权
    洗衣方式和洗衣机

    公开(公告)号：US20110146002A1

    公开(公告)日：2011-06-23

    申请号：US12976361

    申请日：2010-12-22

    Applicant: Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

    Inventor： Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

    IPC: D06L1/20

    CPC classification number: D06F35/006 ,  D06F33/02 ,  D06F35/005 ,  D06F35/007 ,  D06F39/003 ,  D06F39/083 ,  D06F39/088

    Abstract: Provided are a washing method and washing machine. According to an aspect of the present invention, there is provided a washing method including: performing an eco-rinsing process where a drum rotates in a state where at least a portion of a laundry is pressed against an inner wall of the drum and wash water is sprayed into the drum; performing an intermediating process for reducing an RPM of the drum to an RPM at which at least a portion of the laundry is pressed against an inner wall of the drum; and performing an eco-rinsing process where the drum is accelerated and the wash water is sprayed into the drum.

    Abstract translation: 提供洗涤方法和洗衣机。 根据本发明的一个方面，提供了一种洗涤方法，包括：在滚筒的至少一部分被压靠在滚筒的内壁上并洗涤水的状态下进行滚筒旋转的生态漂洗处理 被喷入滚筒; 执行用于将滚筒的RPM减小到RPM的中间过程，其中至少一部分衣物被压靠在滚筒的内壁上; 并且进行生态漂洗过程，其中鼓被加速并且洗涤水被喷射到滚筒中。

    Glue layer for hydrofluorocarbon etch
    13.
    发明授权
    Glue layer for hydrofluorocarbon etch 有权
    氟化氢蚀刻胶层

    公开(公告)号：US07902073B2

    公开(公告)日：2011-03-08

    申请号：US11610953

    申请日：2006-12-14

    Applicant: Ji Soo Kim ,  Sangheon Lee ,  Deepak K. Gupta ,  S. M. Reza Sadjadi

    Inventor： Ji Soo Kim ,  Sangheon Lee ,  Deepak K. Gupta ,  S. M. Reza Sadjadi

    IPC: H01L21/311

    CPC classification number: H01L21/31144 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/312

    Abstract: A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.

    Abstract translation: 提供了一种用于蚀刻设置在处理晶片上的掩模下方的蚀刻层中的特征的方法。 沉积烃基胶层。 用至少一个循环蚀刻处理晶片上的蚀刻层，其中每个循环包括在掩模上和基于烃的胶层上沉积氢氟碳化合物层，其中基于烃的胶层增加氢氟烃层的粘附和蚀刻蚀刻 层。

    Reduction of feature critical dimensions
    14.
    发明授权
    Reduction of feature critical dimensions 有权
    减少功能关键尺寸

    公开(公告)号：US07541291B2

    公开(公告)日：2009-06-02

    申请号：US11821422

    申请日：2007-06-22

    Applicant: Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

    Inventor： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

    IPC: H01L21/302

    CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

    Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

    Abstract translation: 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

    Washing method and washing machine
    17.
    发明授权
    Washing method and washing machine 有权
    洗衣方法和洗衣机

    公开(公告)号：US09506178B2

    公开(公告)日：2016-11-29

    申请号：US12976376

    申请日：2010-12-22

    Applicant: Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

    Inventor： Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

    IPC: D06F35/00 ,  D06F33/02 ,  D06F39/00 ,  D06F39/08

    CPC classification number: D06F35/006 ,  D06F33/02 ,  D06F35/005 ,  D06F35/007 ,  D06F39/003 ,  D06F39/083 ,  D06F39/088

    Abstract: Provided are a washing method and washing machine. According to an aspect of the present invention, there is provided a washing method including: performing a balancing process where washing water is sprayed to a laundry loaded in the drum and the laundry is evenly distributed by repeatedly accelerating the drum, constantly maintaining a constant RPM of the drum, and reducing the RPM of the drum; and performing a laundry treating process where the drum rotates such that at least a portion of the laundry is pressed against an inner wall of the drum and the wash water is sprayed into the drum.

    Abstract translation: 提供洗涤方法和洗衣机。 根据本发明的一个方面，提供了一种洗涤方法，包括：进行平衡处理，其中将洗涤水喷射到装在滚筒中的衣物上，衣物通过反复加速滚筒均匀分布，不断地保持恒定的RPM 的鼓，并减小滚筒的RPM; 并且进行衣物处理过程，其中滚筒旋转使得至少一部分衣物被压靠在滚筒的内壁上，并将洗涤水喷入滚筒中。

    Washing method and washing machine
    18.
    发明授权
    Washing method and washing machine 有权
    洗衣方法和洗衣机

    公开(公告)号：US09080274B2

    公开(公告)日：2015-07-14

    申请号：US12976361

    申请日：2010-12-22

    Applicant: Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

    Inventor： Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

    IPC: D06F35/00 ,  D06F33/02 ,  D06F39/00 ,  D06F39/08

    CPC classification number: D06F35/006 ,  D06F33/02 ,  D06F35/005 ,  D06F35/007 ,  D06F39/003 ,  D06F39/083 ,  D06F39/088

    Abstract: Provided are a washing method and washing machine. According to an aspect of the present invention, there is provided a washing method including: performing an eco-rinsing process where a drum rotates in a state where at least a portion of a laundry is pressed against an inner wall of the drum and wash water is sprayed into the drum; performing an intermediating process for reducing an RPM of the drum to an RPM at which at least a portion of the laundry is pressed against an inner wall of the drum; and performing an eco-rinsing process where the drum is accelerated and the wash water is sprayed into the drum.

    Abstract translation: 提供洗涤方法和洗衣机。 根据本发明的一个方面，提供了一种洗涤方法，包括：在滚筒的至少一部分被压靠在滚筒的内壁上并洗涤水的状态下进行滚筒旋转的生态漂洗处理 被喷入滚筒; 执行用于将滚筒的RPM减小到RPM的中间过程，其中至少一部分衣物被压靠在滚筒的内壁上; 并且进行生态漂洗过程，其中鼓被加速并且洗涤水被喷射到滚筒中。

    Critical dimension reduction and roughness control
    19.
    发明授权
    Critical dimension reduction and roughness control 有权
    关键尺寸减小和粗糙度控制

    公开(公告)号：US08268118B2

    公开(公告)日：2012-09-18

    申请号：US12711420

    申请日：2010-02-24

    Applicant: Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S. M. Reza Sadjadi

    Inventor： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S. M. Reza Sadjadi

    IPC: H01L21/3065

    CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

    Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

    Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

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