公开(公告)号：US07005393B2

公开(公告)日：2006-02-28

申请号：US10170688

申请日：2002-06-14

申请人： Kiyoshi Irino

发明人： Kiyoshi Irino

IPC分类号： H01L21/31

CPC分类号： H01L29/6659 ,  H01L21/28176 ,  H01L21/28194 ,  H01L27/10873 ,  H01L29/4983 ,  Y10S257/90

摘要： A method of fabricating a semiconductor device which includes introducing, after a step of patterning a gate electrode, nitrogen atoms into an oxide film covering a device region on a semiconductor substrate, by exposing said oxide film to an atmosphere containing-nitrogen, such that said nitrogen atoms do not reach a region underneath said gate electrode, covering, after said step of introducing nitrogen atoms, said oxide film including said gate electrode by a CVD oxide film continuously without taking out said semiconductor substrate out of a processing chamber and forming a sidewall oxide film on a sidewall surface of said gate electrode by etching back said CVD oxide film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在通过将所述氧化物膜暴露在含氮的气氛中之后，将氮原子图案化的步骤引入到覆盖半导体衬底上的器件区域的氧化物膜中，使得所述 氮原子不到达所述栅电极下方的区域，在所述引入氮原子的步骤之后，连续地将所述包含所述栅电极的氧化膜通过CVD氧化膜覆盖，而不将所述半导体衬底从处理室中取出并形成侧壁 通过蚀刻所述CVD氧化物膜，在所述栅电极的侧壁表面上形成氧化膜。

公开(公告)号：US5990517A

公开(公告)日：1999-11-23

申请号：US917936

申请日：1997-08-27

申请人： Kiyoshi Irino

发明人： Kiyoshi Irino

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/49

CPC分类号： H01L29/6659 ,  H01L21/28176 ,  H01L29/4983 ,  H01L21/28194 ,  H01L27/10873 ,  Y10S257/90

摘要： A semiconductor device includes a substrate, a gate oxide film formed on the substrate, a gate electrode provided on the gate oxide film, first and second diffusion regions formed in the substrate at both lateral sides of the gate electrode. The gate electrode includes a first region located immediately underneath the gate electrode and a second region adjacent to the first region, wherein the first and second regions contain N atoms with respective concentrations such that the second region contains N with a higher concentration as compared with the first region.

摘要翻译： 半导体器件包括衬底，形成在衬底上的栅极氧化膜，设置在栅极氧化膜上的栅电极，在栅电极的两个侧面处形成在衬底中的第一和第二扩散区。 所述栅电极包括位于所述栅电极正下方的第一区域和与所述第一区域相邻的第二区域，其中所述第一区域和所述第二区域包含具有各自浓度的N原子，使得所述第二区域与所述第一区域相比具有较高浓度的N 第一区。