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公开(公告)号：US20080095658A1
公开(公告)日：2008-04-24
申请号：US10585993
申请日：2005-01-13
IPC分类号： C22C9/00
CPC分类号： C22C32/0073 , B22F2998/10 , B22F2999/00 , C22C9/00 , C22C32/0089 , F16C33/121 , C22C1/05 , B22F3/10 , B22F3/18 , B22F2201/013
摘要： [PROBLEMS] To provide a Cu—Bi—hard substance base sintered alloy in which the respective properties of Bi and hard substance can be satisfactorily exerted. [MEANS FOR SOLVING PROBLEMS] There is provided a Ph free copper base sintered alloy, comprising 1 to 30% of Bi and 0.1 to 10% of hard substance particles of 10 to 50 μm average diameter, (1) wherein a Bi phase having an average particle diameter smaller than that of the hard substance particles is dispersed in a matrix of Cu, or wherein with respect to a Bi phase in contact with the hard substance particles, the ratio of presence of hard substance particles exhibiting a ratio of hard substance particle contact length to entire circumference of Bi phase of 50% or less is 70% or greater based on the total number of hard substance particles.
摘要翻译： [问题]提供可以令人满意地施加Bi和硬质物质的各种性质的Cu-Bi硬质物质基烧结合金。 [解决问题的手段]提供了一种无Ph的铜基烧结合金，其包含1至30％的Bi和0.1至10％的平均直径为10至50μm的硬物质颗粒，（1）其中Bi相具有 平均粒径小于硬物质粒子的粒径分散在Cu基体中，或者相对于与硬质粒子接触的Bi相，存在硬物质粒子的比例为硬质粒子的比率 50％以下的Bi相的整周的接触长度相对于硬质粒子的总数为70％以上。
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公开(公告)号：US06689488B2
公开(公告)日：2004-02-10
申请号：US10067338
申请日：2002-02-07
申请人： Daisuke Yoshitome , Yasuhisa Tanaka
发明人： Daisuke Yoshitome , Yasuhisa Tanaka
IPC分类号： B32B1501
CPC分类号： B23K35/262 , B23K35/0244 , H05K3/3436 , H05K3/3463 , Y10T428/12715 , Y10T428/12722
摘要： A lead-free solder, which contains from 1.0 to 3.5% of Ag, from 0.1 to 0.7% of Cu, and from 0.1 to 2.0% of In, the balance consisting of unavoidable impurities and Sn, is appropriate for ball-grid array (BGA). The solute Cu suppresses growth of intermetallic compound formed at the interface between the bulk of solder and a Ni or Cu conductor.
摘要翻译： 含有1.0〜3.5％的Ag，0.1〜0.7％的Cu和0.1〜2.0％的In的无铅焊料，余量由不可避免的杂质和Sn构成，适用于球栅阵列（ BGA）。 溶质Cu抑制在大部分焊料与Ni或Cu导体之间的界面处形成的金属间化合物的生长。
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