公开(公告)号：US20060189146A1

公开(公告)日：2006-08-24

申请号：US11061056

申请日：2005-02-18

Applicant: Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

Inventor： Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

IPC: H01L21/469

CPC classification number: G03F7/38 ,  G03F7/091 ,  H01L21/0276

Abstract: In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.

Abstract translation: 在制造半导体时，将DBARC层沉积在晶片上以防止反射。 光致抗蚀剂层沉积在DBARC层上，并且晶片被选择性地暴露于照射下。 照射在光致抗蚀剂和DBARC的曝光区域中产生光酸（H +离子）。 为了在DBARC中为微特征提供更好的分辨率，在后曝光烘烤（PEB）之前或期间，通过涂覆的晶片垂直产生电场，以通过DBARC产生H +离子的均匀垂直分布。 然后将涂覆的晶片展开以除去DBARC的未曝光部分或曝光部分。 由显影剂形成的空腔由于H +离子的均匀垂直分布而具有基本垂直的侧壁。

公开(公告)号：US20060128079A1

公开(公告)日：2006-06-15

申请号：US11301019

申请日：2005-12-12

Applicant: Chiang-Hung Tseng ,  Jia-Pang Pang ,  Chih-Cheng Lin ,  Tse Wu

Inventor： Chiang-Hung Tseng ,  Jia-Pang Pang ,  Chih-Cheng Lin ,  Tse Wu

IPC: C23C8/00 ,  H01L21/84 ,  H01L21/00

CPC classification number: H01L27/1259 ,  C23C8/02 ,  C23C10/02 ,  C23C16/047 ,  H01L27/1214 ,  H01L29/66757

Abstract: A method for manufacturing a thin film transistor (TFT) includes the steps of: providing a substrate (1); and forming a TFT circuit on the substrate using laser-induced chemical vapor deposition (LCVD). Detailedly, the method includes providing the bare substrate, cleaning the substrate with cleaning liquid, and successively forming a gate electrode (2), a gate oxide layer (3), a source electrode (5), and a drain electrode (6) on the substrate by LCVD, thus obtaining the thin film transistor. The forming steps may be controlled by one or more computer programs. The LCVD can be pyrolytic LCVD, photolytic LCVD, or photophysical LCVD. The method is simple and inexpensive.

Abstract translation: 一种制造薄膜晶体管（TFT）的方法包括以下步骤：提供衬底（1）; 以及使用激光诱导化学气相沉积（LCVD）在衬底上形成TFT电路。 详细地说，该方法包括提供裸衬底，用清洗液清洗衬底，以及在栅电极（2），栅氧化层（3），源电极（5）和漏电极（6）上依次形成 通过LCVD进行衬底，从而获得薄膜晶体管。 形成步骤可以由一个或多个计算机程序控制。 LCVD可以是热解LCVD，光解LCVD或光物理LCVD。 该方法简单而便宜。

公开(公告)号：US06962771B1

公开(公告)日：2005-11-08

申请号：US09689930

申请日：2000-10-13

Applicant: Chung-Shi Liu ,  Chih-Cheng Lin

Inventor： Chung-Shi Liu ,  Chih-Cheng Lin

IPC: G03F7/00 ,  G03F7/095 ,  H01L21/00 ,  H01L21/027 ,  H01L21/311 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/0276 ,  G03F7/095 ,  H01L21/31144 ,  H01L21/76811

Abstract: Key to the present invention is the subsequent use of two layers of different positive photoresists, possessing different exposure wavelength sensitivities. It is a general object of the present invention to provide a new and improved method of forming semiconductor integrated circuit devices, and more specifically, in the formation of self-aligned dual damascene interconnects and vias, which incorporates two positive photoresist systems, which have different wavelength sensitivities, to form trench/via openings with only a two-step etching process. In addition, the two layers of photoresist exhibit different etch resistant properties, for subsequent selective reactive ion etching steps. The use of a “high contrast” positive photoresist system has been developed wherein the resist system exposure sensitivity is optimized for wavelengths, deep-UV (248 nm) for the top layer of resist, the trench pattern, and I-line (365 nm) for the bottom layer of resist, the via pattern. The resist system provides a process in dual damascene for trench/via formation and has the following properties: selective etch resistance, thermal stability during processing, ease of processing and developing, and good adhesion properties.

Abstract translation: 本发明的关键是随后使用具有不同曝光波长灵敏度的两层不同的正光致抗蚀剂。 本发明的一般目的是提供一种形成半导体集成电路器件的新的和改进的方法，更具体地说，在形成自对准双镶嵌互连和通孔的过程中，其结合了两个具有不同的正光致抗蚀剂系统 波长敏感度，以仅形成两步蚀刻工艺形成沟槽/通孔开口。 此外，两层光致抗蚀剂表现出不同的耐蚀刻性能，用于随后的选择性反应离子蚀刻步骤。 已经开发了使用“高对比度”正性光致抗蚀剂系统，其中抗蚀剂体系曝光灵敏度针对波长，抗蚀剂顶层，沟槽图案和I线（365nm）的深UV（248nm） ）为底层的抗蚀剂，通孔图案。 抗蚀剂体系为沟槽/通孔形成提供了双镶嵌工艺，并且具有以下特性：选择性耐蚀刻性，加工过程中的热稳定性，加工和显影的容易性以及良好的附着性。

公开(公告)号：US5321193A

公开(公告)日：1994-06-14

申请号：US748347

申请日：1991-08-22

Applicant: Chih-Cheng Lin ,  Hung-Ming Yang ,  Chong-Chien Lai ,  Chien-Chung Chang ,  Larry L. K. Kuo ,  Kun-Yung Tsai

Inventor： Chih-Cheng Lin ,  Hung-Ming Yang ,  Chong-Chien Lai ,  Chien-Chung Chang ,  Larry L. K. Kuo ,  Kun-Yung Tsai

IPC: B01J21/02 ,  C07C5/25 ,  C07C5/27 ,  C07C5/22

CPC classification number: C07C5/2512 ,  B01J21/02 ,  C07C5/2772

Abstract: A process for the skeletal isomerization of olefins wherein the olefins are contacted with a SKISO-11 alumina base catalyst to convert into isomerized products effectively under the conversion conditions comprising a temperature of above 200.degree. C. to about 650.degree. C., the pressure of 0.3 to about 10 atmospheres and a molar ratio of hydrogen or nitrogen to olefins feed from 0 to about 10.

Abstract translation: 一种烯烃骨架异构化方法，其中烯烃与SKISO-11氧化铝基催化剂接触，在包含200℃至650℃的温度的转化条件下有效地转化成异构化产物， 0.3至约10个大气压，氢或氮与烯烃的摩尔比为0至约10。

公开(公告)号：US20150127683A1

公开(公告)日：2015-05-07

申请号：US14465216

申请日：2014-08-21

Applicant: CHIH-CHENG LIN

Inventor： CHIH-CHENG LIN

IPC: G06F17/30 ,  G06Q50/26

CPC classification number: G06Q50/26

Abstract: A vehicle-end database management system is revealed. The vehicle-end database management system includes a read/write controller and a vehicle-end database manager. Data related to vehicles is written into the vehicle-end database manager by the read/write controller. Or data related to vehicles is read from the vehicle-end database manager by the read/write controller. Thus end-users can get the data related to vehicles timely so as to manage vehicles conveniently.

Abstract translation: 揭示了车载数据库管理系统。 车载数据库管理系统包括读/写控制器和车载数据库管理器。 与车辆相关的数据由读/写控制器写入车辆端数据库管理器。 或者与车辆相关的数据由读/写控制器从车载数据库管理器读取。 因此，终端用户可以及时获得与车辆相关的数据，以便方便地管理车辆。

公开(公告)号：US08644025B2

公开(公告)日：2014-02-04

申请号：US12976714

申请日：2010-12-22

Applicant: Huan Chin Luo ,  Hua Ting Chang ,  Chin Sheng Lin ,  Chih Cheng Lin ,  Chung Pei Hung

Inventor： Huan Chin Luo ,  Hua Ting Chang ,  Chin Sheng Lin ,  Chih Cheng Lin ,  Chung Pei Hung

IPC: H05K1/14

CPC classification number: G06K19/07 ,  H05K1/118 ,  H05K1/189

Abstract: An integrated circuit (IC) film for a smart card is provided. The IC film includes a flexible printed circuit (FPC) board, first electrical contacts, second electrical contacts, and an IC chip. The first electrical contacts are disposed on a first side of the FPC board, and the second electrical contacts are disposed on a second side of the FPC board. The IC chip is disposed on the FPC board and bonded to the leads of the FPC board to thereby form electrical connection. The total thickness of the FPC board and the chip is not larger than 0.5 mm.

Abstract translation: 提供了一种用于智能卡的集成电路（IC）膜。 IC膜包括柔性印刷电路板（FPC），第一电触点，第二电触点和IC芯片。 第一电触头设置在FPC基板的第一侧上，第二电触点设置在FPC基板的第二侧上。 IC芯片配置在FPC基板上，并与FPC基板的引线接合，形成电连接。 FPC基板和芯片的总厚度不大于0.5mm。

公开(公告)号：US08465300B2

公开(公告)日：2013-06-18

申请号：US13232914

申请日：2011-09-14

Applicant: Chih-Cheng Lin

Inventor： Chih-Cheng Lin

IPC: H01R4/66

CPC classification number: H01R24/86

Abstract: A cable installation assembly includes a connector, a power wire, a ground wire and two signal wires. The connector includes a base, having a plurality of terminal containing grooves formed in the base and arranged separately adjacent to each other. The power wire includes a power core and a power terminal electrically coupled to power core, and each power terminal is plugged into each corresponding terminal containing groove. The ground wire includes a grounding core and a grounding terminal electrically coupled to the grounding core and plugged into the terminal containing groove. The signal wire includes a signal core and a signal terminal electrically coupled to signal core, and the two signal terminals are plugged into the terminal containing grooves respectively and not arranged adjacent to each other, so that signals can be transmitted without interfering with one another.

Abstract translation: 电缆安装组件包括连接器，电源线，接地线和两根信号线。 连接器包括基部，其具有形成在基部中并且彼此分开相邻布置的多个端子容纳槽。 电源线包括电源芯和电连接到电源芯的电源端子，并且每个电源端子插入每个对应的端子容纳槽中。 接地线包括接地芯和接地端子，电接地接地芯并插入到端子容纳槽中。 信号线包括信号芯和电耦合到信号芯的信号端子，并且两个信号端子分别插入到包含槽的端子中，并且不彼此相邻布置，使得可以传输信号而不会彼此干扰。

公开(公告)号：US08328574B1

公开(公告)日：2012-12-11

申请号：US13209429

申请日：2011-08-14

Applicant: Chih-Cheng Lin

Inventor： Chih-Cheng Lin

IPC: H01R4/38

CPC classification number: H01R13/622 ,  H01R9/03 ,  H01R13/6275 ,  H01R13/639 ,  H01R13/64

Abstract: A cable connector joint fastening structure includes a male connector, a female connector, and a fastener. The male connector includes a male terminal body with a male terminal joint, a freely rotating screw sleeve locked around the external periphery of the male terminal joint. The female connector includes a female terminal body with a female terminal joint, and an insert space formed in the female terminal joint for inserting the male terminal joint, and the screw sleeve is screwed and coupled to the female terminal joint. The fastener includes a pivot portion formed at an external side of the female connector, and a locking arm pivotally installed onto the pivot portion, extended towards the male terminal body, disposed across the screw sleeve, and locked to the male connector.

Abstract translation: 电缆连接器接头紧固结构包括阳连接器，阴连接器和紧固件。 公连接器包括具有阳端子接头的阳端子体，围绕阳端子接头的外周锁定的自由旋转的螺旋套筒。 阴连接器包括具有阴端子接头的阴端子体，以及形成在阴端子接头中用于插入阳端子接头的插入空间，螺纹套筒螺纹连接到阴端子接头。 紧固件包括形成在阴连接器的外侧的枢转部分，以及枢转地安装在枢转部分上的锁定臂，朝向阳端子主体延伸，跨过螺钉套筒设置并锁定到阳连接器。

公开(公告)号：US20090251287A1

公开(公告)日：2009-10-08

申请号：US12078882

申请日：2008-04-08

Applicant: Chih-Cheng Lin

Inventor： Chih-Cheng Lin

IPC: H04B7/00

CPC classification number: G06Q10/10 ,  G07C9/00007

Abstract: An electronic vehicle license is installed on a vehicle to store a record and insurance data of the vehicle, and a reading and writing control device is provided for an authority/official organization to read and write data into the electronic vehicle license; the electronic vehicle license includes a storage unit, a non-contact transferring unit, and a central processing unit; the reading and writing control device includes a central controlling unit, which has a weight assigned thereto in accordance with a jurisdiction of the authority that is authorized to use the reading and writing control device so that the central controlling unit is allowed to handle certain categories of data; the reading and writing control device further includes an encrypting and decrypting unit, a non-contact transferring unit, and a displaying unit to show the data of the vehicle license.

Abstract translation: 在车辆上安装电子车辆许可证以存储车辆的记录和保险数据，并且向权威/官方组织提供读写控制装置以将数据读取和写入电子车辆许可证; 电子车辆许可包括存储单元，非接触式传送单元和中央处理单元; 读写控制装置包括中央控制单元，其具有根据授权使用读写控制装置的授权的管辖权分配的权重，使得中央控制单元被允许处理某些类别的 数据; 读写控制装置还包括加密和解密单元，非接触式传送单元和显示车辆许可证的数据的显示单元。

公开(公告)号：US20080277341A1

公开(公告)日：2008-11-13

申请号：US11746705

申请日：2007-05-10

Applicant: Nai-Jen Huang ,  Chih-Cheng Lin ,  Chih-Shan Lin

Inventor： Nai-Jen Huang ,  Chih-Cheng Lin ,  Chih-Shan Lin

IPC: C02F9/06 ,  C02F1/44 ,  C02F1/469 ,  C02F1/58

CPC classification number: B01D61/022 ,  B01D61/025 ,  B01D61/027 ,  B01D61/422 ,  B01D61/48 ,  B01D61/58 ,  B01D2317/025 ,  C02F1/441 ,  C02F1/442 ,  C02F1/444 ,  C02F1/4693 ,  C02F2103/08 ,  Y02A20/131 ,  Y02A20/134

Abstract: A method for making reverse osmosis permeate water and mineral water from deep seawater includes the steps of: a) sand-filtering or ultra-filtering the deep seawater; b) conducting a first nano-filtering step to nano-filter the deep seawater after the step a) to obtain first nano-filtration permeate water and first nano-filtration concentrated water; c) filtering the first nano-filtration permeate water using a reverse osmosis apparatus to obtain reverse osmosis permeate water and reverse osmosis concentrated water; and d) treating the first nano-filtration concentrated water by electrodialysis to obtain anion-rich water, cation-rich water, and mineral water.

Abstract translation: 从深海渗透水和矿泉水进行反渗透的方法包括以下步骤：a）对深海水进行砂过滤或超滤; b）在步骤a）之后进行第一纳米过滤步骤对深海水进行纳滤，得到第一纳米过滤渗透水和第一纳米过滤浓缩水; c）使用反渗透装置过滤第一纳米过滤渗透水，得到反渗透渗透水和反渗透浓缩水; 和d）通过电渗析处理第一纳米过滤浓缩水以获得富含离子的水，富阳离子水和矿泉水。