公开(公告)号：US20110281422A1

公开(公告)日：2011-11-17

申请号：US13177412

申请日：2011-07-06

Applicant: Li Wang ,  Fengyi Jiang

Inventor： Li Wang ,  Fengyi Jiang

IPC: H01L21/306 ,  H01L21/20

CPC classification number: H01L33/007 ,  H01S5/32341 ,  H01S5/327

Abstract: One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.

Abstract translation: 本发明的一个实施例提供了一种用于获得制造在沟槽分隔的衬底上的各个多层结构的高质量边界的方法。 在操作期间，该过程接收沟槽分隔的衬底，其中衬底表面被分隔成由沟槽阵列隔开的隔离沉积平台的阵列。 然后，该工艺在其中一个沉积平台上形成多层结构，其包括第一掺杂层，有源层和第二掺杂层。 接下来，该方法去除多层结构的侧壁。

公开(公告)号：US20110253972A1

公开(公告)日：2011-10-20

申请号：US13059207

申请日：2008-08-19

Applicant: Chuanbing Xiong ,  Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Guping Wang

Inventor： Chuanbing Xiong ,  Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Guping Wang

IPC: H01L33/06 ,  H01L33/44

CPC classification number: H01L21/02458 ,  H01L21/02381 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/46

Abstract: A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor film comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multi-quantum-wells (MQW) active layer; forming an ohmic-contact metal layer on the first doped semiconductor layer; depositing a metal substrate on top of the ohmic-contact metal layer, wherein the density and/or material composition of the metal substrate is adjustable along the vertical direction, thereby causing the strain in the multilayer semiconductor film to be adjustable; etching off the growth substrate; and forming an ohmic-electrode coupled to the second doped semiconductor layer.

Abstract translation: 公开了一种用于制造基于应变可调多层半导体膜的半导体发光器件的方法。 该方法包括在生长衬底上外延生长多层半导体膜，其中多层半导体膜包括第一掺杂半导体层，第二掺杂半导体层和多量子阱（MQW）有源层; 在所述第一掺杂半导体层上形成欧姆接触金属层; 在欧姆接触金属层的顶部上沉积金属衬底，其中金属衬底的密度和/或材料组成可沿着垂直方向调节，从而使多层半导体膜中的应变可调; 蚀刻生长衬底; 以及形成耦合到所述第二掺杂半导体层的欧姆电极。

公开(公告)号：US20110218109A1

公开(公告)日：2011-09-08

申请号：US13127864

申请日：2009-11-04

Applicant: Shengqiang Bai ,  Lidong Chen ,  Lin He ,  Li Wang ,  Wenbin Zhang ,  Yanfei Zhou

Inventor： Shengqiang Bai ,  Lidong Chen ,  Lin He ,  Li Wang ,  Wenbin Zhang ,  Yanfei Zhou

IPC: H01L39/12 ,  C01B33/06 ,  C01F17/00 ,  C22C13/00 ,  C22C28/00 ,  C22C30/00 ,  C22C30/04 ,  B22F1/00 ,  B22F3/10 ,  B22F3/105

CPC classification number: C22C28/00 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/04 ,  C22C13/00 ,  C22C19/00 ,  C22C2202/02 ,  H01L35/22 ,  B22F9/04 ,  B22F3/10 ,  B22F2202/13

Abstract: A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12≦x≦16, 40≦y≦43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.

Abstract translation: 式（I）的包合物：M8AxBy-x（I）其中：M为碱土金属，稀土金属，碱金属，Cd或其组合，A为Ga，Al，In，Zn或 其组合; B是Ge，Si，Sn，Ni或它们的组合; 和12＆nlE; x＆nlE; 16，40＆nl; y＆nlE; 43，x和y各自是或不是整数。 本发明的实施方案还包括制备和使用包合化合物的方法。

公开(公告)号：US20110207900A1

公开(公告)日：2011-08-25

申请号：US13127591

申请日：2008-12-02

Applicant: Jianjun Yi ,  Baozuo Yin ,  Chunming Cui ,  Zhifei Li ,  Liang Cui ,  Huashu Li ,  Weihuan Huang ,  Jianying Zhang ,  Li Wang

Inventor： Jianjun Yi ,  Baozuo Yin ,  Chunming Cui ,  Zhifei Li ,  Liang Cui ,  Huashu Li ,  Weihuan Huang ,  Jianying Zhang ,  Li Wang

IPC: C08F4/76 ,  B01J31/02 ,  B01J37/08 ,  B01J37/06

CPC classification number: C08F10/00 ,  C08F10/06 ,  C08F110/06 ,  C08F210/06 ,  C08F4/6545 ,  C08F4/651 ,  C08F4/6543 ,  C08F2500/15 ,  C08F210/16 ,  C08F2500/12

Abstract: A catalyst for homopolymerizing and copolymerizing propylene and its preparation and use. The catalyst component includes titanium compound containing at least one Ti-halogen bond and at least two kinds of electron donor compounds A and B supported on MgCl2.nROH adduct, wherein the electron donor compound A is a compound of formula (I), the electron donor compound B is ester or ether compound; the molar ratio between compound A and compound B is 0.1-5; the molar ratio between the total amounts of the two kinds of electron donors and MgCl2.nROH is 0.01-1, based on the amount of MgCl2.nROH; and the molar ration between the titanium compound containing Ti-halogen bond and MgCl2.nROH is 1-200. The catalyst has high activity, high stereospecificity and good copolymerization performance. In addition, the morphology of the polymer obtained therefrom is good.

Abstract translation: 丙烯均聚和共聚的催化剂及其制备和用途。 催化剂组分包括含有至少一个Ti-卤素键的钛化合物和负载在MgCl 2·nROH加合物上的至少两种电子给体化合物A和B，其中电子给体化合物A是式（I）化合物， 给体化合物B是酯或醚化合物; 化合物A与化合物B之间的摩尔比为0.1-5; 基于MgCl 2·nROH的量，两种电子给体和MgCl 2·nROH的总量之间的摩尔比为0.01-1。 含Ti-卤键的钛化合物与MgCl 2·nROH之间的摩尔比为1-200。 该催化剂具有高活性，高立体定向性和良好的共聚性能。 此外，由其获得的聚合物的形态是良好的。

公开(公告)号：US20110147705A1

公开(公告)日：2011-06-23

申请号：US13059845

申请日：2008-08-19

Applicant: Fengyi Jiang ,  Junlin Liu ,  Li Wang

Inventor： Fengyi Jiang ,  Junlin Liu ,  Li Wang

IPC: H01L33/04 ,  H01L33/52 ,  B82Y99/00

CPC classification number: H01L33/44

Abstract: One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.

Abstract translation: 本发明的一个实施例提供一种半导体发光器件，其包括：衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层，多量子阱（MQW ）有源层，位于第一和第二掺杂半导体层之间。 该器件还包括耦合到第一掺杂半导体层的第一电极，耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层的侧壁的有机硅保护层，MQW有源层， 以及未被第二电极覆盖的第二掺杂半导体层的水平表面的一部分。

公开(公告)号：US20110147704A1

公开(公告)日：2011-06-23

申请号：US13059398

申请日：2008-08-19

Applicant: Fengyi Jiang ,  Junlin Liu ,  Li Wang

Inventor： Fengyi Jiang ,  Junlin Liu ,  Li Wang

IPC: H01L33/04 ,  H01L33/44 ,  B82Y99/00

CPC classification number: H01L33/44 ,  H01L33/0079

Abstract: A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.

Abstract translation: 一种发光装置及其制造方法。 该器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂半导体层之间的多量子阱（MQW）。 该器件还包括耦合到第一掺杂半导体层的第一电极和耦合到第二掺杂半导体层的第二电极。 该器件还包括第一钝化层，其基本上覆盖第一和第二掺杂半导体层的侧壁，MQW有源层以及第二掺杂半导体层的未被第二电极覆盖的部分水平表面。 第一钝化层通过氧化技术形成。 该器件还包括覆盖第一钝化层的第二钝化层。

公开(公告)号：US20110143467A1

公开(公告)日：2011-06-16

申请号：US13059213

申请日：2008-08-22

Applicant: Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Shaohua Zhang ,  Guping Wang ,  Guangxu Wang

Inventor： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Shaohua Zhang ,  Guping Wang ,  Guangxu Wang

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/60

CPC classification number: H01L21/0237 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/44

Abstract: One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.

Abstract translation: 本发明的一个实施例提供一种制造InGaAlN发光半导体结构的方法。 在制造过程中，至少一个单晶牺牲层沉积在基底表面上以形成组合衬底，其中单晶牺牲层与InGaAlN晶格匹配，其中单晶层形成 牺牲层。 接下来，在组合衬底上制造InGaAlN发光半导体结构。 然后将在组合衬底上制造的InGaAlN结构转移到支撑衬底，从而有助于垂直电极构型。 转移InGaAlN结构包括用化学蚀刻剂蚀刻单晶牺牲层。 此外，InGaAlN和基底对化学蚀刻剂具有耐受性。 在传输InGaAlN结构后，可以重新使用基底。

公开(公告)号：US20110105921A1

公开(公告)日：2011-05-05

申请号：US12609700

申请日：2009-10-30

Applicant: Li Wang

Inventor： Li Wang

IPC: A61B5/02

CPC classification number: A61B5/024 ,  A61B5/0245 ,  A61B5/0452 ,  A61B5/7285 ,  A61N1/3627 ,  A61N1/3702 ,  A61N1/37258

Abstract: Aspects of this disclosure describe measuring intervals within a cardiac cycle to, for example, determine whether a patient is a candidate for cardiac therapy initiation or modification. The intervals may be measured in response to a trigger identifying a physiological event. The intervals and an identification of the physiological event may be stored. A physician or clinician may determine whether the patient is a candidate for cardiac therapy modification based on the measured intervals.

Abstract translation: 本公开的方面描述了心脏周期内的测量间隔，以例如确定患者是否是心脏治疗开始或修改的候选者。 可以响应于识别生理事件的触发来测量间隔。 可以存储生理事件的间隔和识别。 医生或临床医生可以基于测量的间隔来确定患者是否是心脏修复的候选者。

公开(公告)号：US07902556B2

公开(公告)日：2011-03-08

申请号：US12067690

申请日：2006-11-17

Applicant: Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

Inventor： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

IPC: H01L33/00

CPC classification number: H01L33/0066 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L33/0087 ,  H01L33/12

Abstract: One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.

Abstract translation: 本发明的一个实施例提供一种半导体发光器件，其包括：（1）硅（Si）衬底; （2）形成在Si衬底的表面上的银（Ag）过渡层，其中Ag过渡层覆盖Si衬底表面; 和（3）在Ag涂覆的Si衬底上制造的InGaAlN，ZnMgCdO或ZnBeCdO基半导体发光结构。 注意，Ag过渡层防止Si衬底表面与用于生长半导体发光结构的反应气体形成无定形外涂层。

公开(公告)号：US20110033417A1

公开(公告)日：2011-02-10

申请号：US12675897

申请日：2008-08-27

Applicant: Gopinadhan N. Anilkumar ,  Frank Bennett ,  Tin-Yau Chan ,  Kevin X. Chen ,  Mousumi Sannigrahi ,  Francisco Velazquez ,  Srikanth Venkatraman ,  Qingbei Zeng ,  Jose S. Duca ,  Charles A. Lesburg ,  Joseph A. Kozlowski ,  F. George Njoroge ,  Stuart B. Rosenblum ,  Neng-Yang Shih ,  Stephen J. Gavalas ,  Yueheng Jiang ,  Patrick A. Pinto ,  Haiyan Pu ,  Oleg B. Selyutin ,  Bancha Vibulbhan ,  Li Wang ,  Wanli Wu ,  Weiying Yang ,  Yuhua Huang ,  Hsueh-Cheng Huang ,  Robert Palermo ,  Boris Feld

Inventor： Gopinadhan N. Anilkumar ,  Frank Bennett ,  Tin-Yau Chan ,  Kevin X. Chen ,  Mousumi Sannigrahi ,  Francisco Velazquez ,  Srikanth Venkatraman ,  Qingbei Zeng ,  Jose S. Duca ,  Charles A. Lesburg ,  Joseph A. Kozlowski ,  F. George Njoroge ,  Stuart B. Rosenblum ,  Neng-Yang Shih ,  Stephen J. Gavalas ,  Yueheng Jiang ,  Patrick A. Pinto ,  Haiyan Pu ,  Oleg B. Selyutin ,  Bancha Vibulbhan ,  Li Wang ,  Wanli Wu ,  Weiying Yang ,  Yuhua Huang ,  Hsueh-Cheng Huang ,  Robert Palermo ,  Boris Feld

IPC: A61K38/21 ,  C07D401/04 ,  C07D413/14 ,  C07D209/42 ,  C07D401/14 ,  C07D417/14 ,  C07D407/14 ,  C07D409/14 ,  A61K31/4439 ,  A61K31/444 ,  A61K31/404 ,  A61K31/4545 ,  A61K31/513 ,  A61K31/443 ,  A61K31/4709 ,  A61K31/4436 ,  A61K31/5377 ,  A61K31/538 ,  A61K31/5415 ,  A61K31/7088 ,  A61K31/7052 ,  A61K39/12 ,  A61K39/42 ,  A61P31/12 ,  A61P31/14

CPC classification number: C07D417/14 ,  C07D209/42 ,  C07D401/04 ,  C07D401/14 ,  C07D403/04 ,  C07D405/14 ,  C07D409/14 ,  C07D413/14

Abstract: The present invention relates to 2,3-Substituted Indole Derivatives, compositions comprising at least one 2,3-Substituted Indole Derivative, and methods of using the 2,3-Substituted Indole Derivatives for treating or preventing a viral infection or a virus-related disorder in a patient.

Abstract translation: 本发明涉及2,3-取代的吲哚衍生物，包含至少一种2,3-取代的吲哚衍生物的组合物和使用2,3-取代的吲哚衍生物用于治疗或预防病毒感染或病毒相关的方法 病人无序。