公开(公告)号：US20020148964A1

公开(公告)日：2002-10-17

申请号：US09834825

申请日：2001-04-13

Applicant: MCNC

Inventor： David E. Dausch ,  Gary E. McGuire

IPC: G01J005/00

CPC classification number: B81B3/0035 ,  G02B26/0833 ,  G02B26/0841 ,  G02B26/0866

Abstract: The present invention provides for an improved electromagnetic radiation detector having a micromachined electrostatic chopping device. The MEMS flexible film chopping device provides reliability, efficiency, noise reduction and temperature fluctuation compensation capabilities to the associated electromagnetic radiation detector. An electromagnetic radiation detector having an electrostatic chopper device comprises a detector material element, first and second electrodes in electrical contact with the detector material element and electrically isolated from one another. Additionally, the chopper device will incorporate a flexible film actuator overlying the detector material layer and moveable relative thereto. The flexible film actuator will typically include an electrode element and a biasing element such that the actuator remains in a fully curled, open state absent electrostatic voltage and moves to a fully uncurled, closed state upon the application of electrostatic voltage. Arrays that incorporate a plurality of electromagnetic radiation detectors and/or electrostatic chopping devices are additionally provided for.

Abstract translation: 本发明提供一种具有微加工静电斩波装置的改进的电磁辐射检测器。 MEMS柔性薄膜切断装置为相关的电磁辐射探测器提供可靠性，效率，降噪和温度波动补偿能力。 具有静电斩波装置的电磁辐射检测器包括检测器材料元件，与检测器材料元件电接触并彼此电隔离的第一和第二电极。 此外，斩波器装置将包括一个柔性膜致动器，覆盖检测器材料层并可相对于其移动。 柔性膜致动器通常将包括电极元件和偏置元件，使得致动器在静电电压下保持完全卷曲的打开状态，并且在施加静电电压时移动到完全未弯曲的闭合状态。 另外提供了并入有多个电磁辐射检测器和/或静电斩波装置的阵列。

公开(公告)号：US20020141477A1

公开(公告)日：2002-10-03

申请号：US10107361

申请日：2002-03-28

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroshi Akahori ,  Shuichi Samata

IPC: B05D001/00 ,  F27D011/00 ,  G01J005/00 ,  C23C016/00 ,  A21B001/00

CPC classification number: C23C16/52

Abstract: A radiant light from a reaction chamber is measured outside the chamber, and a relation between a change of a radiation ratio of the radiant light, and a change of a thickness of a thin film is acquired, when a CVD apparatus is used to form the film on a substrate in the chamber. After acquiring the relation between the change of the radiation ratio and the change of the film thickness, the change of the radiation ratio is measured, when the CVD apparatus is used to form the film. The thickness of the film is estimated from the change of the radiation ratio measured in measuring the change of the radiation ratio from the relation between the change of the radiation ratio and the change of the film thickness acquired in acquiring the relation between the change of the radiation ratio and the change of the film thickness.

Abstract translation: 在室外测量来自反应室的辐射光，并且当使用CVD装置形成时，获得辐射光的辐射比的变化与薄膜的厚度的变化之间的关系 在室中的基底上的膜。 在获得辐射比的变化和膜厚的变化之间的关系之后，当使用CVD装置形成膜时，测量辐射比的变化。 膜的厚度是根据从辐射比的变化与所获取的膜厚变化之间的关系中测定的辐射比的变化而测定的放射率的变化来推定的， 辐射比和膜厚度的变化。

公开(公告)号：US20020117621A1

公开(公告)日：2002-08-29

申请号：US09942212

申请日：2001-08-29

Inventor： Osamu Nakamura ,  Hiroki Shimomae ,  Masaki Kamata

IPC: G01J005/00

CPC classification number: H04N5/33 ,  H04N5/2176

Abstract: An infrared imaging apparatus is used for carrying out shading correction of picture data obtained as a result of an image-taking process using a camera head including an optical system, a plurality of detector elements and a container for accommodating the detector elements. The apparatus includes a first correction unit for creating corrected-sensitivity picture data by correction of shading components caused by the optical system to produce uniform scene components included in the picture data obtained as a result of an image-taking process of a uniform scene; a storage unit for storing a housing response profile for correcting a housing-shading component caused by infrared rays radiated by the optical system and the container for each of the detector elements; and a second correction unit for creating corrected-housing-shading picture data by correction of housing-shading components based on the corrected-sensitivity picture data and the housing response profile for each of the detector elements.

Abstract translation: 红外成像装置用于执行使用包括光学系统，多个检测器元件和用于容纳检测器元件的容器的照相机头的摄像处理获得的图像数据的阴影校正。 该装置包括：第一校正单元，用于通过校正由光学系统引起的阴影分量来产生校正的灵敏度图像数据，以产生由均匀场景的图像拍摄处理获得的图像数据中包含的均匀场景成分; 存储单元，用于存储用于校正由所述光学系统辐射的红外线和每个所述检测器元件的容器引起的壳体遮蔽部件的壳体响应曲线; 以及第二校正单元，用于基于每个检测器元件的校正灵敏度图像数据和外壳响应曲线来校正外壳遮蔽部件来创建校正的外壳阴影图像数据。

公开(公告)号：US20020066858A1

公开(公告)日：2002-06-06

申请号：US10027702

申请日：2001-12-19

Inventor： Dohn J. Trempala ,  Charles Greuzard

IPC: G01J005/00

CPC classification number: G01J5/04 ,  G01J5/02 ,  G01J5/025 ,  G01J5/026 ,  G01J5/0265 ,  G01J5/028 ,  G01J5/08 ,  G01J5/0815 ,  G01J5/0834 ,  G08B17/12

Abstract: An elongated heat detection device identifies heat sources based upon infrared radiation. The device includes a purged and sealed instrumentation chamber and a rugged and shock absorbing case. The case surrounds and protects the chamber and includes anti-roll features. The instrumentation is provided in a forward end of the device and is capable of being plugged into the balance of the device for rapid repair and replacement. The power supply is contained in a rear end of the device and the case forms a portion of the power supply circuit. The device employs a startup test of the sensor and the power supply. Also, the power supply is continuously monitored. The device also employs a lost device locator such that the device can be readily located after being misplaced. Moreover, the device has a signal expanding feature that allows a heat source that is rapidly passed over to be relocated on subsequent sweeps of the device.

Abstract translation: 细长的热检测装置基于红外辐射识别热源。 该设备包括一个清洗和密封的仪器室和一个坚固耐用的减震箱。 外壳围绕并保护室，并包括防侧倾功能。 仪器设置在设备的前端，并且能够插入设备的平衡中，以便快速修复和更换。 电源被容纳在设备的后端，并且壳体形成电源电路的一部分。 该设备采用传感器和电源的启动测试。 另外，连续监控电源。 该设备还采用丢失的设备定位器，使得该设备可以容易地位于错放位置之后。 此外，该装置具有信号扩展特征，其允许快速通过的热源在装置的后续扫描中重新定位。

公开(公告)号：US20020040967A1

公开(公告)日：2002-04-11

申请号：US09939674

申请日：2001-08-28

Applicant: NEC Corporation

Inventor： Naoki Oda

IPC: G01J005/00

CPC classification number: G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  G01J2005/068 ,  H04N5/33

Abstract: An infrared ray detector includes an array of pixels each including an infrared ray sensitive section having a first thermo-sensitive resistor and an infrared ray non-sensitive section having a second thermo-sensitive resistor. The second thermo-sensitive resistor is covered by an infrared ray reflector film. A pair of visors extending from the first thermo-sensitive resistor overhang the adjacent second thermo-sensitive resistor. A difference between the output signals from the first and second thermo-sensitive resistors is delivered as an output signal which cancels the fluctuation caused by the ambient temperature or Joule heat of the bias current.

Abstract translation: 一种红外线检测器，包括像素阵列，每个像素阵列包括具有第一热敏电阻器的红外线敏感部分和具有第二热敏电阻器的红外线非敏感部分。 第二个热敏电阻被红外线反射膜覆盖。 从第一热敏电阻延伸的一对遮阳板悬垂在相邻的第二热敏电阻上。 来自第一和第二热敏电阻器的输出信号之间的差异作为输出信号被输送，该输出信号消除由环境温度引起的波动或偏置电流的焦耳热。

公开(公告)号：US20020011568A1

公开(公告)日：2002-01-31

申请号：US09314406

申请日：1999-05-19

Inventor： WILFRIED DIEKMANN

IPC: G01J005/00

CPC classification number: G01J5/34 ,  G01J5/10 ,  G01N21/3504

Abstract: An infrared optical gas sensor is improved with respect to the quality of the measured signal. The infrared radiation detectors (4, 6) used as the reference radiation and measuring radiation detectors include thin layers of a partially transparent material, which sends an electric measured signal that depends on the radiation intensity received. The infrared radiation detectors are arranged stacked one over the other and with an interposed narrow-band filter (3, 5) each, which are transparent at the measuring wavelength. The infrared radiation detectors have an electrically conductive coating on the top side and the underside and are contacted. The measuring radiation detector (6) follows the reference radiation detector (4) in the direction of the beam and the reference radiation detector (4) is transparent for at least part of the measuring radiation at the measuring wavelength, or the reference radiation detector follows the measuring radiation detector in the direction of the beam, and the measuring radiation detector is transparent for at least part of the reference radiation at the reference wavelength.

Abstract translation: 红外光学气体传感器相对于测量信号的质量得到改进。 用作参考辐射和测量辐射检测器的红外辐射检测器（4,6）包括部分透明材料的薄层，其发送取决于所接收的辐射强度的电测量信号。 红外线辐射检测器被布置成彼此堆叠并且分别插入在测量波长处是透明的窄带滤光器（3,5）。 红外辐射检测器在顶侧和下侧具有导电涂层，并与之接触。 测量辐射检测器（6）沿着光束的方向跟随参考辐射检测器（4），并且参考辐射检测器（4）对于测量波长处的测量辐射的至少一部分是透明的，<亮度> 或 ，参考辐射检测器沿着光束的方向跟随测量辐射检测器，并且测量辐射检测器对于参考波长的参考辐射的至少一部分是透明的。

公开(公告)号：US20020008202A1

公开(公告)日：2002-01-24

申请号：US09805091

申请日：2001-03-13

Inventor： John L. Galloway

IPC: G01J005/00

CPC classification number: H04N5/33

Abstract: Arrays of pyroelectric elements are used in surveillance systems by focusing the radiation from a scene on to them and examining the output from the array. If an object is moved into the scene and left stationary, it will hinder the subsequent operation of the system by masking part of the scene from the field of view of the array; this fault condition may be detected by the following procedure. At intervals arrangements are made to move the image of the scene to and from across the array using a suitable transducer and the outputs from the array are examined. The outputs from the array when the scene is in its normal condition and the image is moved across the array comprise a set of signals corresponding to a reference image, which may be compared with the corresponding outputs from the array when the image is moved across the array on a subsequent occasion. Change between the reference image signals and subsequent image signals are interpreted in terms of the introduction to, or removal of, objects from the scene.

Abstract translation: 热电元件阵列用于监视系统，将场景中的辐射聚焦到它们上并检查阵列的输出。 如果一个物体被移动到场景中并且保持静止，则它将通过从阵列的视野屏蔽场景的一部分来阻碍系统的后续操作; 可以通过以下步骤检测该故障状况。 在间隔的情况下，使用合适的换能器将场景的图像移动到阵列上并从阵列移动，并且检查来自阵列的输出。 当场景处于其正常状态并且图像在阵列上移动时，来自阵列的输出包括对应于参考图像的一组信号，当参考图像被移动时可以与阵列的相应输出进行比较 阵列在随后的场合。 参考图像信号和后续图像信号之间的变化根据对场景的介绍或去除而进行解释。

公开(公告)号：US20010042831A1

公开(公告)日：2001-11-22

申请号：US09813858

申请日：2001-03-22

Inventor： Kent S. Wood ,  Gilbert G. Fritz ,  Armen M. Gulian ,  Deborah Van Vechten

IPC: G01J005/00

CPC classification number: G01J5/12 ,  G01J1/429 ,  H01L31/101

Abstract: A fast photon detector with high energy and position resolution, which may be used in the infrared, ultraviolet, EUV, and X-ray ranges includes an absorber, a thermoelectric sensor, a heat sink, all disposed on a dielectric substrate. An absorber receives a photon and transforms the energy of the photon into a change in temperature within the absorber. A thermoelectric sensor is thermally coupled to the absorber. When the absorber receives the photon, the energy of the photon is very quickly transformed into a time dependent temperature difference across the sensor. A heat sink is thermally coupled to the sensor, to maintain the heat flow across the sensor. The absorber, sensor, and heat sink are disposed upon a dielectric substrate, such that the heat transfer from the sensor to the dielectric substrate is much slower than the signal duration. In another main embodiment, an anisotropic, thin superconducting oxide film is disposed upon a dielectric substrate. The superconducting oxide film in normal state acts as a thermoelectric sensor, and absorbs photons. A large voltage response across the longitudinal direction of the sensor results from the temperature gradient between the top of the sensor and the dielectric substrate, which acts as a heat sink. In this case, the signal duration equals the duration of the heat transfer across the sensor. Optionally, a metallic absorber and an optional insulating layer (or a non-electrically conducting absorber) are disposed upon and thermally coupled to the thin normal state superconducting oxide film to ensure high quantum efficiency of photon absorption.

Abstract translation: 可用于红外，紫外，EUV和X射线范围的具有高能量和位置分辨率的快速光子检测器包括全部设置在电介质基底上的吸收体，热电传感器，散热器。 吸收器接收光子并将光子的能量转换成吸收器内的温度变化。 热电传感器热耦合到吸收器。 当吸收器接收到光子时，光子的能量非常迅速地变换成跨传感器的时间依赖的温度差。 散热器热耦合到传感器，以保持热量流过传感器。 吸收器，传感器和散热器设置在电介质基板上，使得从传感器到电介质基板的热传递比信号持续时间慢得多。 在另一个主要实施例中，各向异性薄的超导氧化物膜设置在电介质基片上。 正常状态下的超导氧化膜用作热电传感器，并吸收光子。 传感器纵向方向上的大电压响应来自传感器顶部与作为散热器的电介质基板之间的温度梯度。 在这种情况下，信号持续时间等于传感器传热的持续时间。 任选地，金属吸收体和任选的绝缘层（或非导电吸收体）设置在薄的正常状态的超导氧化物膜上，并且热连接到薄的正常状态的超导氧化物膜上以确保光子吸收的高量子效率。

公开(公告)号：US20040267850A1

公开(公告)日：2004-12-30

申请号：US10856992

申请日：2004-06-01

Inventor： Colin Bird ,  Colin J. Parrish

IPC: G01J005/00

CPC classification number: G01J5/06 ,  G01J5/0022

Abstract: A method of measuring temperature of a component capable of emitting thermal radiation and reflecting background radiation comprising the steps of: providing a pyrometer for measuring the radiation from the component, characterised by coating a part of the component with a first emissivity coating and a part of the component with a different and second emissivity coating, each with known emissivities EH and EL respectively, recording a first radiation measurement from the first emissivity coating RH and a second radiation measurement from the second emissivity coating RL, then calculating the true radiation RBlade from the component from the equation 1 R Blade = ( R H E H - R L E H null ( 1 - E H 1 - E L ) ) ( 1 - E L E H null ( 1 - E H 1 - E L ) ) and relate the RBlade value to the true component temperature by calibration of the pyrometer.

公开(公告)号：US20040262544A1

公开(公告)日：2004-12-30

申请号：US10828654

申请日：2004-04-21

Inventor： Xi-Cheng Zhang ,  Jingzhou Xu ,  Kai Liu

IPC: G01J005/00

CPC classification number: G01J3/10 ,  G02F2203/13

Abstract: An apparatus and a method for the generation of high-energy terahertz radiation. The apparatus and method function by impinging optical radiation on the surface of a semiconductor substrate, creating a photo-generated dipole emitting terahertz radiation. Because it is desirable to orient the dipole perpendicular to the radiation direction to maximize the power of the terahertz radiation, the surface of the semiconductor is modified to achieve this desirable result. More specifically, three embodiments of the surface modification are disclosed: (1) a grating is created in the top surface of a GaAs semiconductor substrate, (2) an InAs film is formed on a Teflon base to create a grating structure on the semiconductor substrate, and (3) a grating is disposed in the surface of the semiconductor substrate such that the optical radiation engages the substrate at Brewster's angle.

Abstract translation: 用于产生高能太赫兹辐射的装置和方法。 该装置和方法通过将光辐射照射在半导体衬底的表面上，产生光产生的偶极发射太赫兹辐射。 因为期望使偶极子垂直于辐射方向定向以使太赫兹辐射的功率最大化，所以修改半导体的表面以实现该期望的结果。 更具体地，公开了表面改性的三个实施方案：（1）在GaAs半导体衬底的顶表面中形成光栅，（2）在特氟隆基底上形成InAs膜，以在半导体衬底上形成光栅结构 ，和（3）在半导体衬底的表面中设置光栅，使得光辐射以布鲁斯特角接合衬底。