Characterization of ultra shallow junctions in semiconductor wafers
    141.
    发明授权
    Characterization of ultra shallow junctions in semiconductor wafers 有权
    半导体晶圆中超浅结的表征

    公开(公告)号:US07248367B2

    公开(公告)日:2007-07-24

    申请号:US10796603

    申请日:2004-03-08

    CPC classification number: G01R31/307 G01N21/1717

    Abstract: To measure USJ profile abruptness, a PMR-type optical metrology tool is to perform a series of two or more measurements, each with different pump/probe beam separations. Quadrature (Q) and in-phase (I) measurements are obtained for each measurement and used to derive a line in I-Q space. An abruptness measurement is derived by comparing the line slope to a similar line slope obtained for a sample having a known USJ profile. USJ profile depth is measured by obtaining quadrature (Q) values for one or more measurements. Each Q value is translated to a corresponding depth measurement using a table or similar lookup device.

    Abstract translation: 为了测量USJ轮廓的突然性,PMR型光学测量工具将执行一系列两个或更多个测量,每个测量具有不同的泵/探针光束分离。 对于每个测量获得正交(Q)和同相(I)测量,并用于在I-Q空间中导出线。 通过将线斜率与对于具有已知USJ曲线的样本获得的类似线斜率进行比较,得出突然度测量。 通过获得一次或多次测量的正交(Q)值来测量USJ轮廓深度。 使用表或类似的查找设备将每个Q值转换为相应的深度测量。

    Detector configurations for optical metrology

    公开(公告)号:US20060066868A1

    公开(公告)日:2006-03-30

    申请号:US11273686

    申请日:2005-11-14

    Applicant: Jon Opsal

    Inventor: Jon Opsal

    CPC classification number: G01B11/0641 G01J4/04 G01N21/211 G01N2021/213

    Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

    Standardized sample for characterizing the performance of a scatterometer
    144.
    发明授权
    Standardized sample for characterizing the performance of a scatterometer 失效
    用于表征散射仪性能的标准样品

    公开(公告)号:US06989896B2

    公开(公告)日:2006-01-24

    申请号:US10268375

    申请日:2002-10-09

    CPC classification number: G01N21/211 G01N21/278 G01N21/4785 G01N2021/213

    Abstract: A standardized sample for scatterometry includes four quadrants each including an inner block surrounded by four outer blocks. A pattern of gratings is repeated within each of the blocks using different resolutions and orientations. Each grating within an outer block has a matching grating within the block's pair. A grating and its matching grating are negative images of each other—the pitch and line-size of a grating are equal, respectively to the line size and pitch of the matching grating. The inner block also includes a series of background patterns positioned behind the gratings. These patterns include repeating patterns of hole and repeating line structures. This series of structures cover a large die area, helping to simulate the conditions faced by real-world scatterometers. The various structures feature a high-degree of alignment, allowing rapid verification using SEM or other techniques.

    Abstract translation: 用于散射测量的标准化样本包括四个象限,每个象限包括被四个外部块包围的内部块。 使用不同的分辨率和取向在每个块内重复光栅图案。 外部块中的每个光栅在块的对内具有匹配的光栅。 光栅及其匹配光栅是彼此的负像,光栅的间距和线尺寸分别相等于匹配光栅的线尺寸和间距。 内部块还包括位于光栅之后的一系列背景图案。 这些图案包括孔的重复图案和重复的线结构。 这一系列的结构覆盖了一个大的模具区域,有助于模拟现实世界散射仪面临的条件。 各种结构具有高度的对准,允许使用SEM或其他技术的快速验证。

    Calibration and alignment of X-ray reflectometric systems
    145.
    发明授权
    Calibration and alignment of X-ray reflectometric systems 有权
    X射线反射测量系统的校准和对准

    公开(公告)号:US06987832B2

    公开(公告)日:2006-01-17

    申请号:US10861120

    申请日:2004-06-04

    CPC classification number: G01N23/20

    Abstract: In the calibration and alignment of an X-ray reflectometry (“XRR”) system for measuring thin films, an approach is presented for accurately determining C0 for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another approach involves aligning an angle-resolved X-ray reflectometer using a focusing optic, such as a Johansson crystal. Another approach relates to validating the focusing optic. Another approach relates to the alignment of the focusing optic with the X-ray source. Another approach concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another approach concerns the calibration of the vertical position of the sample.

    Abstract translation: 在用于测量薄膜的X射线反射测量(“XRR”)系统的校准和对准中,提出了用于准确地确定每个样品放置的C 和用于发现入射X射线 强度对应于检测器阵列的每个像素,从而允许反射计系统的振幅校准。 另一种方法包括使用聚焦光学元件(例如约翰逊晶体)对准角度分辨的X射线反射计。 另一种方法涉及验证聚焦光学元件。 另一种方法涉及聚焦光学元件与X射线源的对准。 另一种方法涉及由样品的倾斜或斜率引起的测量误差的校正。 另一种方法涉及样品的垂直位置的校准。

    Scatterometry to simultaneously measure critical dimensions and film properties
    146.
    发明授权
    Scatterometry to simultaneously measure critical dimensions and film properties 有权
    同时测量临界尺寸和膜性质的散射法

    公开(公告)号:US06982791B2

    公开(公告)日:2006-01-03

    申请号:US10319189

    申请日:2002-12-13

    Applicant: Jon Opsal

    Inventor: Jon Opsal

    CPC classification number: G01N21/211 G01B11/0641 G01N21/8422 G01N2021/213

    Abstract: An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. A polarizer is used to impart a known polarization state to the probe beam and the polarized probe beam is directed against the sample at a shallow angle of incidence. A rotating compensator is used to impart phase retardations to the polarization state of the reflected probe beam. After passing through the compensator, the probe beam passes through a second polarizer (analyzer). After leaving the analyzer, the probe beam is received by a detector. The detector translates the received probe beam into a signal that includes DC, 2ω and 4ω signal components (where ω is the angular velocity of the rotating compensator). A processor analyzes the signal using the DC, 2ω and 4ω components allowing simultaneous evaluation of both critical dimensions and film parameters.

    Abstract translation: 椭偏仪包括用于产生用于与样品相互作用的多色光的探测光束的光源。 使用偏振器将已知的偏振状态赋予探针光束,并且偏振探测光束以较小的入射角对准样品。 使用旋转补偿器将相位延迟赋予反射的探测光束的偏振状态。 探测光束通过补偿器后通过第二个偏振器(分析仪)。 离开分析仪后,探测器被探测器接收。 检测器将接收的探测器转换成包括DC,2omega和4omega信号分量(其中ω是旋转补偿器的角速度)的信号。 处理器使用DC,2omega和4omega组件分析信号,从而同时评估关键尺寸和胶片参数。

    Real time analysis of periodic structures on semiconductors
    147.
    发明授权
    Real time analysis of periodic structures on semiconductors 有权
    半导体周期性结构的实时分析

    公开(公告)号:US06947850B2

    公开(公告)日:2005-09-20

    申请号:US10733598

    申请日:2003-12-11

    Abstract: A system for characterizing periodic structures on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of wavelength or angle of incidence. The output signals are supplied to a parallel processor, which creates an initial theoretical model and calculates the theoretical optical response. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. Thereafter, the complexity of the model is iteratively increased, by dividing the model into layers each having an associated width and height. The model is fit to the data in an iterative manner until a best fit model is obtained which is similar in structure to the periodic structure.

    Abstract translation: 公开了一种用于实时表征周期性结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器,其产生初始理论模型并计算理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较,模型配置被修改为更接近实际的测量结构。 此后,通过将模型分为各自具有相关联的宽度和高度的层,迭代地增加了模型的复杂性。 该模型以迭代方式适合于数据,直到获得与结构相似的周期结构相似的最佳拟合模型。

    Ion implant monitoring through measurement of modulated optical response
    148.
    发明申请
    Ion implant monitoring through measurement of modulated optical response 有权
    通过测量调制光学响应的​​离子注入监测

    公开(公告)号:US20050190369A1

    公开(公告)日:2005-09-01

    申请号:US11122452

    申请日:2005-05-05

    CPC classification number: G01N21/276 G01N21/1717 G01N21/55 G01N2021/3568

    Abstract: A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.

    Abstract translation: 在离子注入的半导体中同时监测离子注入剂量,损伤和/或掺杂剂深度分布的方法包括校准步骤,其中在I-Q空间中识别已知损伤谱的光调制反射率。 在随后的测量步骤中,经验地测量受试者的光调制反射率以获得同相和正交值。 然后在I-Q空间中将同相和正交值与已知的损伤特征进行比较,以表征受试者的损伤特征。

    ION implant monitoring through measurement of modulated optical response
    149.
    发明申请
    ION implant monitoring through measurement of modulated optical response 有权
    通过测量调制光学响应的​​ION植入物监测

    公开(公告)号:US20050083528A1

    公开(公告)日:2005-04-21

    申请号:US10387259

    申请日:2003-03-12

    CPC classification number: G01N21/276 G01N21/1717 G01N21/55 G01N2021/3568

    Abstract: A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.

    Abstract translation: 在离子注入的半导体中同时监测离子注入剂量,损伤和/或掺杂剂深度分布的方法包括校准步骤,其中在I-Q空间中识别已知损伤谱的光调制反射率。 在随后的测量步骤中,经验地测量受试者的光调制反射率以获得同相和正交值。 然后在I-Q空间中将同相和正交值与已知的损伤特征进行比较,以表征受试者的损伤特征。

    Optical scatterometry of asymmetric lines and structures
    150.
    发明申请
    Optical scatterometry of asymmetric lines and structures 有权
    不对称线和结构的光散射

    公开(公告)号:US20050041258A1

    公开(公告)日:2005-02-24

    申请号:US10385863

    申请日:2003-03-11

    CPC classification number: G03F7/70625 G03F7/70633

    Abstract: A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.

    Abstract translation: 用于分析不对称结构(包括隔离和周期性结构)的方法包括用于宽带光谱仪的分离检测器。 分体检测器具有单独的左右两半。 通过独立测量和比较右和左散射光线,可以确定关于不对称性的信息。

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